K4A4G165WF-BCWE vs K4A4G165WD-BCRC Comparison
Detailed side-by-side comparison of K4A4G165WF-BCWE by Samsung Electronics and K4A4G165WD-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A4G165WF-BCWE | K4A4G165WD-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $10.65 | $5.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Data Rate | 3200 Mbps | — |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage | 1.2 V (1.14 V to 1.26 V) | 1.2 V |
| Access Time | 19 ns | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Package | FBGA-96 (TFBGA) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | — |
| Die Generation | Samsung F-die | — |
| Data Mask | Supported (DM) | — |
| ZQ Calibration | Supported | Yes |
| On-Die Termination | Dynamic ODT supported | — |
| CRC | Supported | — |
| Auto Precharge | Supported | Yes |
| Asynchronous Reset | Supported | — |
| RoHS Status | Compliant (per JLCPCB listing) | Lead free / RoHS Compliant |
| Density | — | 4 Gbit |
| Speed Bin | — | DDR4-2400 (BCRC) |
| Process Generation | — | Samsung D-die |
| Interface Type | — | DDR4 (double data rate, parallel) |
| On-Die Termination (ODT) | — | Yes |
| Data Mask Function | — | Yes |
| CRC Function | — | Yes |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |