K4A8G085WB-BICH vs K4A8G045WB Comparison

Detailed side-by-side comparison of K4A8G085WB-BICH by Samsung Electronics and K4A8G045WB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G085WB-BICH K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB-BICH - 8Gb DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB-BICH ✓ Active
Samsung Electronics
K4A8G045WB K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB - 8Gb DDR4 SDRAM 2Gx4 2133Mbps 1.2V | Samsung

K4A8G045WB ✓ Active

Specification Comparison

Parameter K4A8G085WB-BICH K4A8G045WB
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.96 $9.27
Memory Type DDR4 SDRAM DDR4 SDRAM (B-die)
Density 8Gb 8 Gb
Organization 1G x 8 2G x 4
Supply Voltage 1.2V 1.2 V
Data Rate 2400 Mbps (DDR4-2400) 2133 Mbps
Package 78-ball FBGA 78-ball FBGA
Operating Temperature 0°C to 85°C 0 C to +85 C
Max Supply Current 170mA 211.7 mA
Burst Length BL8, BL16 —
CAS Latency Programmable —
On-Die ECC Yes —
Data Bus Inversion Yes —
RoHS Compliant —
Lead-Free Yes —
Die Revision B-die —
Refresh Cycles — 8192
Mounting Type — Surface Mount
Number of Terminals — 78
Clocking — Differential clock (CK / CK#)
On-Die Termination — Yes (ODT pin)
Asynchronous Reset — Yes
Posted CAS — Yes
Programmable CWL — Yes
Internal (Self) Calibration — Yes
RoHS Status — [DATA_NEEDED: RoHS status]

Datasheets & Resources

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