K4A8G085WC-BIWE vs K4A8G085WC-BCRC Comparison
Detailed side-by-side comparison of K4A8G085WC-BIWE by Samsung Electronics and K4A8G085WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WC-BIWE | K4A8G085WC-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 |
| Data Rate | 3200 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Package | 78-FBGA | 78-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| CAS Latency | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | Auto/Self refresh |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Supply Voltage | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| Operating Temperature | — | 0C to +95C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |