K4A8G085WC-BIWE vs K4A8G085WC-BCRC Perbandingan
Perbandingan bersamaan detil K4A8G085WC-BIWE dari Samsung Electronics dan K4A8G085WC-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WC-BIWE | K4A8G085WC-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 |
| Laju Data | 3200 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Rentang Suhu Kerja | -40°C to +95°C | — |
| Paket | 78-FBGA | 78-ball FBGA (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | POD-12 | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | — |
| Refresh | Auto-refresh, self-refresh | Auto/Self refresh |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tegangan Pemuat | — | 1.2 V |
| Terminal Pitch | — | 0.8 mm |
| Suhu Kerja | — | 0C to +95C |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |