K4A8G165WB-BCWE vs IS43QR16512B-062AABL Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and IS43QR16512B-062AABL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ ActiveISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | IS43QR16512B-062AABL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 MT/s |
| Supply Voltage | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | — |
| Interface | Parallel | POD (Pseudo Open Drain) |
| Package | 96FBGA | 96-TWBGA (7.5x13.5 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | 0°C to +95°C (case) |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS Status | Compliant | — |
| Lead Free | Yes | — |
| Memory Size | — | 8 Gbit |
| CAS Latency | — | 22-22-22 |
| tRCD | — | 19 ns |
| RoHS | — | Compliant |
| Number of Pins | — | 96 |
| Clock Frequency | — | 1.6 GHz |
| Data Bus Width | — | 16 bit |