K4A8G165WB-BCWE vs IS43QR16512B-062AABL 对比
详细并排对比 K4A8G165WB-BCWE 出自 Samsung Electronics 和 IS43QR16512B-062AABL 出自 ISSI, Integrated Silicon Solution Inc。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
ISSI, Integrated Silicon Solution Inc
IS43QR16512B-062AABL - 8Gb DDR4 SDRAM 512Mx16 | ISSI
IS43QR16512B-062AABL ✓ 量产中规格对比
| 参数 | K4A8G165WB-BCWE | IS43QR16512B-062AABL |
|---|---|---|
| 品牌 | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.55 | $8.10 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | 512M x 16 |
| 数据速率 | 3200 Mbps | 3200 MT/s |
| 电源电压 | 1.2 V | 1.2 V |
| Access Time (CAS Latency) | 19 ns | — |
| 接口 | Parallel | POD (Pseudo Open Drain) |
| 封装 | 96FBGA | 96-TWBGA (7.5x13.5 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | 0°C to +95°C (case) |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS 状态 | Compliant | — |
| Lead Free | Yes | — |
| 存储容量 | — | 8 Gbit |
| CAS 延迟 | — | 22-22-22 |
| tRCD | — | 19 ns |
| RoHS | — | Compliant |
| 引脚数 | — | 96 |
| Clock Frequency | — | 1.6 GHz |
| 数据总线宽度 | — | 16 bit |