K4A8G165WB-BCWE vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSamsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $6.25 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps/pin | 2133 Mbps |
| Supply Voltage | 1.2 V | — |
| Access Time | 19 ns | — |
| Interface | Parallel | DDR4 (synchronous, double data rate) |
| Package | 96FBGA | 96FBGA (TFBGA) |
| Operating Temperature | 0C to +85C | 0C to +85C |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | [DATA_NEEDED: refresh specification] |
| Termination | On-die termination (ODT) | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance statement] | Compliant (per Lisleapex listing) |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Bank Groups | — | DDR4 bank-group architecture |