K4A8G165WB-BCWE vs K4A8G165WB-BCPB Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSamsung Electronics
K4A8G165WB-BCPB
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung
K4A8G165WB-BCPB β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $2.30 |
| Memory Type | DDR4 SDRAM | β |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | β |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Access Time (CAS Latency) | 19 ns | β |
| Interface | Parallel | β |
| Package | 96FBGA | 96-ball FBGA (TFBGA-96) |
| Mounting Type | Surface Mount | β |
| Operating Temperature | 0C to +85C | 0Β°C to 85Β°C |
| Burst Length | 8 | 8 (BL8) |
| Bank Group Architecture | Yes | β |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | β |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | β |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | β |
| Speed Grade | β | 2133 Mbps (PC4-17000) |
| Burst Type | β | Sequential and Interleave |
| CAS Latency | β | Programmable (e.g., 15, 16, 18) |
| Refresh | β | Auto and Self Refresh |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Package Shape | β | RECTANGULAR |
| Terminal Position | β | BOTTOM |