K4A8G165WB-BCWE vs K4A8G165WB-BCPB Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCWE dari Samsung Electronics dan K4A8G165WB-BCPB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCWE | K4A8G165WB-BCPB |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $6,25 | — |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 512M x 16 | — |
| Laju Data | 3200 Mbps/pin | 2133 Mbps |
| Tegangan Pemuat | 1.2 V | — |
| Access Time | 19 ns | — |
| Antarmuka | Parallel | DDR4 (synchronous, double data rate) |
| Paket | 96FBGA | 96FBGA (TFBGA) |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Tipe Mounting | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | — |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | [DATA_NEEDED: refresh specification] |
| Termination | On-die termination (ODT) | — |
| Status RoHS | [DATA_NEEDED: RoHS compliance statement] | Compliant (per Lisleapex listing) |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Density | — | 8 Gb |
| Organisasi | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Bank Groups | — | DDR4 bank-group architecture |