K4A8G165WB-BIRC vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 | Samsung | 2400 Mbps
K4A8G165WB-BIRC β ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIRC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $39.50 | $12.57 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gbit | β |
| Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps | 2400 Mbps (PC4-19200) |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Package | 96-ball FBGA | 96-ball FBGA (PBGA96) |
| Interface | 16-bit | DDR4 (Double Data Rate, synchronous) |
| DLL Enabled Mode | Yes | β |
| On-Die Termination (ODT) | Yes | β |
| Burst Length | 8, 16 | β |
| Row Address | 16 bits | β |
| Column Address | 10 bits | β |
| Bank Count | 16 banks | β |
| RoHS Compliant | Yes | β |
| Memory Size | β | 8 Gb (1 GB) |
| Memory Organization | β | 512M x 16 |
| Technology | β | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | β | 0.8 mm |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | -40C to +95C |
| On-Die Termination | β | Yes (ODT with dynamic ODT) |
| ZQ Calibration | β | Yes |
| CRC / CA Parity | β | Yes (CRC function) |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Refresh | β | Auto-refresh and self-refresh |
| RoHS Status | β | Compliant |