K4A8G165WB-BIRC vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BIRC by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BIRC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $32.50 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 2400 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Supply Voltage | 1.2 V | — |
| Operating Temperature | -40°C to +95°C | -40C to +95C |
| Package | 96-FBGA | 96-ball FBGA (PBGA96) |
| CAS Latency | 15, 16, 17 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| Interface | Pseudo-open-drain | Parallel (DDR4 SDRAM bus) |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Mounting Type | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |