K4A8G165WB-BIRC vs K4A8G165WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BIRC sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BIRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BIRC ✓ NakahandaSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BIRC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $32.50 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | — |
| Rate ng Data | 2400 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | -40°C to +95°C | -40C to +95C |
| Packhaging | 96-FBGA | 96-ball FBGA (PBGA96) |
| Latensya ng CAS | 15, 16, 17 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| Interface | Pseudo-open-drain | Parallel (DDR4 SDRAM bus) |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Uri ng Pagpapasok | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |