K4A8G165WB-BIRC vs K4A8G165WB-BCRC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BIRC disebabkan oleh Samsung Electronics dan K4A8G165WB-BCRC disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BIRC | K4A8G165WB-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $32.50 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Kadar Data | 2400 Mbps | 2400 Mbps/pin (DDR4-2400) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | -40°C to +95°C | -40C to +95C |
| Kemasan | 96-FBGA | 96-ball FBGA (PBGA96) |
| Latensi CAS | 15, 16, 17 | — |
| Burst Length | 8 (BL8) and 4 (BC4) | — |
| Antaramuka | Pseudo-open-drain | Parallel (DDR4 SDRAM bus) |
| On-Die Termination | Yes | — |
| Refresh | Auto-refresh and self-refresh | — |
| Row Address | 16K | — |
| Column Address | 1K | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS, B-die 8Gb die |
| Jenis Pemasangan | — | Surface Mount |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |