K4A8G165WC-BCRC vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCRC
K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps | Samsung
K4A8G165WC-BCRC β ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSpecification Comparison
| Parameter | K4A8G165WC-BCRC | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $23.00 | $12.57 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 2400 Mbps | 2400 Mbps (PC4-19200) |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | β |
| VPP Voltage | 2.5 V | β |
| Operating Temperature | 0Β°C to +95Β°C (case) | -40C to +95C |
| Package | 96-ball FBGA (9mm x 13mm) | 96-ball FBGA (PBGA96) |
| Interface | 16-bit I/O | DDR4 (Double Data Rate, synchronous) |
| Banks | 16 (4 bank groups) | β |
| Burst Length | 8 (BL8) | β |
| CAS Latency | Programmable (e.g., 16, 17, 18) | β |
| Refresh | Temperature-compensated self-refresh (TCSR) | Auto-refresh and self-refresh |
| RoHS | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Size | β | 8 Gb (1 GB) |
| Memory Organization | β | 512M x 16 |
| Supply Voltage | β | 1.2 V (1.14 V to 1.26 V) |
| Technology | β | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | β | 0.8 mm |
| On-Die Termination | β | Yes (ODT with dynamic ODT) |
| ZQ Calibration | β | Yes |
| CRC / CA Parity | β | Yes (CRC function) |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| RoHS Status | β | Compliant |