K4A8G165WC-BCRC vs K4A8G165WB-BCRC Comparison

Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electro-Mechanics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electro-Mechanics
K4A8G165WC-BCRC K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

K4A8G165WC-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

K4A8G165WC-BCRC ✓ Active
Samsung Electronics
K4A8G165WB-BCRC K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung

K4A8G165WB-BCRC ✓ Active

Specification Comparison

Parameter K4A8G165WC-BCRC K4A8G165WB-BCRC
Brand Samsung Electro-Mechanics Samsung Electronics
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock —
Unit Price (USD) $19.69 —
Memory Type DDR4 SDRAM DDR4 SDRAM (DRAM, volatile)
Memory Size 8 Gbit 8 Gb
Organization 512M x 16 —
Data Rate 2400 Mbps 2400 Mbps/pin (DDR4-2400)
Clock Frequency 1333 MHz 1200 MHz (DDR4-2400)
Supply Voltage 1.2 V (1.14 V to 1.26 V) —
Interface Parallel, 16-bit DDR Parallel (DDR4 SDRAM bus)
Standby Current (Idle) 2 mA —
Operating Current 64 mA —
Operating Temperature 0 C to +95 C -40C to +95C
Package 96-FBGA (TFBGA) 96-ball FBGA (PBGA96)
Mounting Type Surface Mount Surface Mount
Features Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask —
Die Generation C-die —
Memory Format DRAM —
RoHS Status Compliant —
Memory Organization — 512M x 16
Supply Voltage (VDD) — 1.2 V
Technology — CMOS, B-die 8Gb die
Auto Precharge — Yes
Asynchronous Reset — Yes
CRC / CA Parity — CRC function supported
On-Chip Termination — Dynamic ODT
ZQ Calibration — Yes

Datasheets & Resources

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