K4B4G1646E-BMK0 vs H5TC4G63AFR-PBA Comparison
Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BMK0
K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung
K4B4G1646E-BMK0 β Active
Specification Comparison
| Parameter | K4B4G1646E-BMK0 | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $3.98 |
| Density | 4 Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | β |
| Voltage | 1.35 V | β |
| Operating Temperature | -40Β°C to +95Β°C | β |
| Package | 96-FBGA | 96-ball FBGA |
| Interface | Parallel | 16-bit I/O |
| Clock Frequency | 800 MHz | β |
| Data Rate | 1600 Mbps | 1866 Mbps (PC3L-14900) |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Mounting Type | Surface Mount | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | β |
| Data Mask | Yes | β |
| Supply Voltage (VDD/VDDQ) | β | 1.35V |
| Ball Pitch | β | 0.8mm |
| Number of Banks | β | 8 |
| Burst Length | β | 8 and 4 (with burst chop) |
| CAS Latency (CL) | β | 11, 12, 13 |
| Operating Temperature Range | β | 0Β°C to +95Β°C (Tcase) |
| On-Die Termination (ODT) | β | Yes |
| Write Leveling | β | Yes |
| Auto Self-Refresh | β | Yes |
| Partial Array Self-Refresh | β | Yes |
| RoHS | β | Compliant |