K4B4G1646E-BMK0 vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BMK0 disebabkan oleh Samsung Electronics dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646E-BMK0 | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Density | 4 Gb | 4Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-FBGA | 96-ball FBGA |
| Antaramuka | Parallel | 16-bit I/O |
| Clock Frequency | 800 MHz | — |
| Kadar Data | 1600 Mbps | 1866 Mbps (PC3L-14900) |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Jenis Pemasangan | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| CAS Latency (CL) | — | 11, 12, 13 |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |