K4B4G1646E-BMK0 vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646E-BMK0 sa pamamagitan ng Samsung Electronics at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung
K4B4G1646E-BMK0 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | K4B4G1646E-BMK0 | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $3.98 |
| Density | 4 Gb | 4Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Temperature na Operasyon | -40°C to +95°C | — |
| Packhaging | 96-FBGA | 96-ball FBGA |
| Interface | Parallel | 16-bit I/O |
| Clock Frequency | 800 MHz | — |
| Rate ng Data | 1600 Mbps | 1866 Mbps (PC3L-14900) |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Uri ng Pagpapasok | Surface Mount | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | Yes |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| Burst Length | — | 8 and 4 (with burst chop) |
| CAS Latency (CL) | — | 11, 12, 13 |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |
| RoHS | — | Compliant |