K4B4G1646E-BYMA vs AS4C256M16D3L-12BCNTR Comparison

Detailed side-by-side comparison of K4B4G1646E-BYMA by Samsung Electronics and AS4C256M16D3L-12BCNTR by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Active
Alliance Memory
AS4C256M16D3L-12BCNTR AS4C256M16D3L-12BCNTR - 4Gbit DDR3L SDRAM 96-FBGA | Alliance Memory

AS4C256M16D3L-12BCNTR - 4Gbit DDR3L SDRAM 96-FBGA | Alliance Memory

AS4C256M16D3L-12BCNTR ✓ Active

Specification Comparison

Parameter K4B4G1646E-BYMA AS4C256M16D3L-12BCNTR
Brand Samsung Electronics Alliance Memory
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $14.32 $6.00
Memory Type DDR3L SDRAM SDRAM - DDR3L
Density 4 Gb —
Organization 256M x 16 256M x 16
Supply Voltage 1.35 V (1.28 V to 1.575 V) 1.283V ~ 1.45V
Clock Frequency 933 MHz 800 MHz
Data Rate 1866 Mbps/pin —
Operating Temperature 0°C to +95°C 0°C to +95°C
Operating Current 14 mA —
Standby Current 2 mA, 3 mA —
Package FBGA-96 96-FBGA (9x13mm)
Mounting Type Surface Mount Surface Mount
RoHS Compliant —
CAS Latency [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS Latency]
Burst Length [DATA_NEEDED: Burst Length] —
Number of Pins 96 —
Memory Size — 4Gbit (256M x 16)
Interface — Parallel
Access Time — 20 ns
Data Bus Width — 16 bit
RoHS Status — Compliant
Lead-Free — Yes
Supply Current — [DATA_NEEDED: Supply Current]

Datasheets & Resources

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