K4B4G1646E-BYMATCV vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMATCV by Samsung Electronics and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV β ActiveSamsung Electronics
K4B4G1646E-BYK0
K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK0 β ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYMATCV | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $1.80 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | β |
| Data Rate | 1866 Mbps | DDR3-1600 (800 MHz) |
| Supply Voltage | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage (VDDQ) | 1.35 V | β |
| Package | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Pins | 96 | β |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Number of Banks | 8 | β |
| Burst Length | 8 (with burst chop 4) | 8 (fixed), 4 (burst chop) |
| CAS Latency | Programmable (e.g., 13, 12, 11) | 11 (CL-tRCD-tRP) |
| On-Die Termination (ODT) | Yes | β |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | Yes |
| RoHS Status | Compliant | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| On-Die Termination | β | Yes (dynamic ODT) |
| ZQ Calibration | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| RoHS | β | Compliant |