K4B4G1646E-BYMATCV vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMATCV by Samsung Electronics and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYMATCV | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | — |
| Data Rate | 1866 Mbps | DDR3-1600 (800 MHz) |
| Supply Voltage | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Package | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Number of Pins | 96 | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Number of Banks | 8 | — |
| Burst Length | 8 (with burst chop 4) | 8 (fixed), 4 (burst chop) |
| CAS Latency | Programmable (e.g., 13, 12, 11) | 11 (CL-tRCD-tRP) |
| On-Die Termination (ODT) | Yes | — |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | Yes |
| RoHS Status | Compliant | — |
| Density | — | 4 Gb |
| Organization | — | 256M x 16 |
| Operating Temperature | — | 0°C to +95°C (TC) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |