K4B4G1646E-BYMATCV vs K4B4G1646E-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BYMATCV disebabkan oleh Samsung Electronics dan K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646E-BYMATCV | K4B4G1646E-BYK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit (256M x 16) | — |
| Kadar Data | 1866 Mbps | DDR3-1600 (800 MHz) |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Bilangan Pin | 96 | — |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Number of Banks | 8 | — |
| Burst Length | 8 (with burst chop 4) | 8 (fixed), 4 (burst chop) |
| Latensi CAS | Programmable (e.g., 13, 12, 11) | 11 (CL-tRCD-tRP) |
| On-Die Termination (ODT) | Yes | — |
| Auto Precharge | Yes | Yes |
| Self-Refresh | Yes | Yes |
| Status RoHS | Compliant | — |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Suhu Operasi | — | 0°C to +95°C (TC) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |