K4RAH086VB-BCQK vs H5CG48MEBDX014N Comparison
Detailed side-by-side comparison of K4RAH086VB-BCQK by Samsung Electronics and H5CG48MEBDX014N by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VB-BCQK | H5CG48MEBDX014N |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.02 | $41.68 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 4800 Mbps (DDR5-4800) | 4800 Mbps |
| Clock Frequency | 2400 MHz | — |
| Supply Voltage (VDD) | 1.1 V | — |
| Interface | Parallel | — |
| Package | FBGA-82 | FBGA-82 (11 x 10 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to 95C (commercial) | 0C to +95C |
| ECC | On-die ECC | — |
| Burst Length | BL32 (DDR5 standard) | — |
| Memory Format | DRAM (volatile) | — |
| DLL Mode | DLL Enabled (datasheet timing basis) | — |
| Product Status | Active | — |
| Packaging | Tray | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage | — | 1.1 V |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| Interface Type | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |