K4RAH086VB-BCQK vs H5CG48MEBDX014N 对比
详细并排对比 K4RAH086VB-BCQK 出自 Samsung Electronics 和 H5CG48MEBDX014N 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH086VB-BCQK | H5CG48MEBDX014N |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $41.02 | $41.68 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | 16 Gbit |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 4800 Mbps (DDR5-4800) | 4800 Mbps |
| Clock Frequency | 2400 MHz | — |
| Supply Voltage (VDD) | 1.1 V | — |
| 接口 | Parallel | — |
| 封装 | FBGA-82 | FBGA-82 (11 x 10 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to 95C (commercial) | 0C to +95C |
| ECC | On-die ECC | — |
| Burst Length | BL32 (DDR5 standard) | — |
| Memory Format | DRAM (volatile) | — |
| DLL Mode | DLL Enabled (datasheet timing basis) | — |
| Product Status | Active | — |
| Packaging | Tray | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| 电源电压 | — | 1.1 V |
| Row Address | — | 12 bits |
| Column Address | — | 9 bits |
| Die Generation | — | M-die |
| 接口类型 | — | Parallel, DDR5 |
| Memory Class | — | Synchronous DRAM |
| Speed Class | — | DDR5-4800 (PC5) |