NT5AD512M16B4-HR vs MT40A512M16TB-062E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5AD512M16B4-HR disebabkan oleh Nanya Technology dan MT40A512M16TB-062E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5AD512M16B4-HR | MT40A512M16TB-062E |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $60.00 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| Organisasi | 512M x 16 | 512M x 16 |
| Tegangan Pemberi Arus | 1.2V | — |
| Kemasan | 96-ball TFBGA | 96-FBGA (7.5x13 mm) |
| Temperature Range | 0°C to +95°C | — |
| Kadar Data | 3200 Mbps | 1600 MHz (DDR4-3200) |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Saiz Ingatan | — | 8 Gbit |
| Supply Voltage - VDD/VDDQ | — | 1.2V ±60mV |
| Supply Voltage - VPP | — | 2.5V, -125mV, +250mV |
| tRCD | — | 19 ns |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Gambaran Suhu Operasi | — | 0°C to +95°C (standard), -40°C to +95°C (IT) |
| Jenis Pemasangan | — | Surface Mount |
| Antaramuka | — | Parallel |
| Ciri-ciri | — | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| Status RoHS | — | Compliant |
| REACH Status | — | Compliant |