NT5AD512M16C4-HR vs H5AN8G6NAFR-UHC Comparison
Detailed side-by-side comparison of NT5AD512M16C4-HR by Nanya Technology and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-HR
NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
NT5AD512M16C4-HR β ActiveSK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveSpecification Comparison
| Parameter | NT5AD512M16C4-HR | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $43.10 | $0.12 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | 512M x 16 |
| Density | 8 Gbit | 8 Gb |
| Supply Voltage | 1.2 V | 1.2 V |
| Data Rate | 1.333 GHz (DDR4-2666) | 2400 MT/s |
| Operating Temperature | 0Β°C to +95Β°C | 0Β°C to +85Β°C |
| Package | FBGA-96 (TFBGA) | FBGA-96 |
| Number of Pins | 96 | β |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | β |
| Number of Terminals | β | 96 |
| Package Code | β | TFBGA |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| RoHS Compliant | β | Yes |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Burst Length | β | 8, 4 (with burst chop) |
| Refresh | β | Auto self-refresh |