NT5AD512M16C4-HR vs H5AN8G6NAFR-UHC Comparison

Detailed side-by-side comparison of NT5AD512M16C4-HR by Nanya Technology and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT5AD512M16C4-HR NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech

NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech

NT5AD512M16C4-HR ✓ Active
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ Active

Specification Comparison

Parameter NT5AD512M16C4-HR H5AN8G6NAFR-UHC
Brand Nanya Technology SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR4 SDRAM DDR4 SDRAM (CMOS)
Organization 512M x 16 512M x 16
Density 8 Gbit —
Supply Voltage 1.2 V 1.2 V
Data Rate 1.333 GHz (DDR4-2666) 2400 MT/s
Operating Temperature 0°C to +95°C 0C to +85C
Package FBGA-96 (TFBGA) 96-ball FBGA (TFBGA)
Number of Pins 96 —
Auto Self-Refresh Yes —
Built-in Temperature Sensor Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Yes DM function supported
Write Leveling Yes Write leveling function supported
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
CRC Function Yes —
RoHS Compliant —
Memory Density — 8 Gbit
Clock Architecture — Differential clock (CK_t / CK_c), fully synchronous
Mounting Type — Surface Mount
Refresh — Auto self-refresh
Precharge — Auto precharge function
Reset — Asynchronous reset function
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration function
Error Checking — CRC function
RoHS Status — [DATA_NEEDED: RoHS status]

Datasheets & Resources

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