NT5AD512M16C4-HR vs H5AN8G6NAFR-UHC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16C4-HR sa pamamagitan ng Nanya Technology at H5AN8G6NAFR-UHC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5AD512M16C4-HR - 8Gbit DDR4 SDRAM 512Mx16 | Nanya Tech
NT5AD512M16C4-HR ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5AD512M16C4-HR | H5AN8G6NAFR-UHC |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (CMOS) |
| Organisasyon | 512M x 16 | 512M x 16 |
| Density | 8 Gbit | — |
| Volte ng Pagbibigay | 1.2 V | 1.2 V |
| Rate ng Data | 1.333 GHz (DDR4-2666) | 2400 MT/s |
| Temperature na Operasyon | 0°C to +95°C | 0C to +85C |
| Packhaging | FBGA-96 (TFBGA) | 96-ball FBGA (TFBGA) |
| Bilang ng Pins | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | DM function supported |
| Write Leveling | Yes | Write leveling function supported |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Memory Density | — | 8 Gbit |
| Clock Architecture | — | Differential clock (CK_t / CK_c), fully synchronous |
| Uri ng Pagpapasok | — | Surface Mount |
| Refresh | — | Auto self-refresh |
| Precharge | — | Auto precharge function |
| Reset | — | Asynchronous reset function |
| Termination | — | Dynamic on-chip termination (ODT) |
| Calibration | — | ZQ calibration function |
| Error Checking | — | CRC function |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |