NT5CC256M16CP-DI vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of NT5CC256M16CP-DI by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16CP-DI
NT5CC256M16CP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16CP-DI β Active
Specification Comparison
| Parameter | NT5CC256M16CP-DI | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.90 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Density | 4Gb | β |
| Supply Voltage | 1.35V (1.283V to 1.45V) | 1.35 V (1.28 V to 1.575 V) |
| Speed Grade | DDR3-1600 (CL11) | β |
| CAS Latency (CL) | 5, 6, 7, 8, 9, 10, 11 | β |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | β |
| Internal Banks | 8 | β |
| Package | VFBGA-96 | FBGA-96 |
| Operating Temperature | 0C to +95C (Tc) [DATA_NEEDED: exact range] | 0Β°C to +95Β°C |
| Interface | Differential clock (CK, CK#) | β |
| Burst Length | 8, 4 | [DATA_NEEDED: Burst Length] |
| On-Die Termination | Yes (programmable) | β |
| RoHS | Compliant | Compliant |
| Process Technology | 70nm | β |
| Density | β | 4 Gb |
| Clock Frequency | β | 933 MHz |
| Data Rate | β | 1866 Mbps/pin |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Number of Pins | β | 96 |