NT5CC256M16CP-DIA vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5CC256M16CP-DIA disebabkan oleh Nanya Technology dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT5CC256M16CP-DIA | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | Nanya Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit (256M x 16) | — |
| Kadar Data | 1600 Mbps (800 MHz clock) | 1866 Mbps (PC3L-14900) |
| Tegangan Pemberi Arus | 1.35 V (1.283 V to 1.45 V) | — |
| Kemasan | TFBGA-96 (9 x 13 mm, 0.8 mm pitch) | 96-ball FBGA |
| Number of Banks | 8 | 8 |
| CAS Latency (CL) | 11, 12, 13 | 11, 12, 13 |
| Write Latency (CWL) | 5, 6, 7, 8, 9 | — |
| Access Time (tAC) | 0.225 ns | — |
| Gambaran Suhu Operasi | -40°C to +95°C (industrial), -40°C to +105°C (automotive) | 0°C to +95°C (Tcase) |
| RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Jenis Pemasangan | Surface Mount | — |
| Differential Clock Input | Yes (CK, CK#) | — |
| On-Die Termination (ODT) | Yes | Yes |
| Density | — | 4Gb |
| Organisasi | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Burst Length | — | 8 and 4 (with burst chop) |
| Antaramuka | — | 16-bit I/O |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |