NT5CC256M16DP-DIH vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of NT5CC256M16DP-DIH by Nanya Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5CC256M16DP-DIH
NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
NT5CC256M16DP-DIH β Active
Specification Comparison
| Parameter | NT5CC256M16DP-DIH | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $20.00 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V (1.28 V to 1.575 V) |
| Data Rate | 1600 Mbps (DDR3-1600) | 1866 Mbps/pin |
| Package | 96-ball VFBGA | FBGA-96 |
| Operating Temperature Range | 0Β°C to +95Β°C | β |
| CAS Latency | 11 (typical) | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 | [DATA_NEEDED: Burst Length] |
| Auto Self-Refresh | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| RoHS | Compliant | Compliant |
| Clock Frequency | β | 933 MHz |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| Number of Pins | β | 96 |