W634GU6RB09J vs NT6AN8T6WBJ1B1 Comparison

Detailed side-by-side comparison of W634GU6RB09J by Winbond and NT6AN8T6WBJ1B1 by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Nanya Technology
NT6AN8T6WBJ1B1 NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology

NT6AN8T6WBJ1B1 - 8Gb DDR4 SDRAM | Nanya Technology

NT6AN8T6WBJ1B1 ✓ Active

Specification Comparison

Parameter W634GU6RB09J NT6AN8T6WBJ1B1
Brand Winbond Nanya Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.10 $8.75
Memory Type DDR3L SDRAM DDR4 SDRAM
Memory Size 4Gbit (256M x 16) 8 Gb (512M x 16)
Data Rate 1066 MHz (DDR3L-2133) 3200 MT/s
Supply Voltage 1.35V 1.2 V
CAS Latency 20 ns 22 cycles
Package 96-VFBGA (7.5x13mm) 96-ball FBGA
Operating Temperature 0°C to +95°C (Tc) 0C to +95C (TC)
Interface Parallel —
Mounting Type Surface Mount —
RoHS Status Compliant Compliant
Halogen Free Yes —
Organization 256M x 16 —
Burst Length 8 and 4 8 (BL8), 4 (BC4)
Number of Pins 96 —
Ball Pitch 0.8 mm —
I/O Voltage (VDDQ) — 1.2 V
Refresh — Auto-refresh, self-refresh
On-Die Termination — Yes (ODT)
Bank Groups — 4 groups of 4 banks
Row Address — 16 bits
Column Address — 10 bits

Datasheets & Resources

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