YZ48G16V-F9HPI-M vs K4A8G165WC-BCWE Comparison
Detailed side-by-side comparison of YZ48G16V-F9HPI-M by Loongtion and K4A8G165WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ ActiveSpecification Comparison
| Parameter | YZ48G16V-F9HPI-M | K4A8G165WC-BCWE |
|---|---|---|
| Brand | Loongtion | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $38.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 Mbps |
| Package | FBGA96 | 96-FBGA |
| Operating Temperature Range | -40°C to +85°C | 0°C to +95°C |
| Supply Voltage | 1.2 V | — |
| Interface | DDR4 | Differential (CK, /CK) |
| Pin Count | 96 | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Industrial Grade | Yes | — |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | — |
| Data Bus Width | 16 bits | — |
| Refresh | Auto-refresh | — |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| CAS Latency | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| JEDEC Standard | — | JEDEC DDR4 |