YZ48G16V-F9HPI-M vs K4A8G165WC-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci YZ48G16V-F9HPI-M disebabkan oleh Loongtion dan K4A8G165WC-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WC-BCWE - 8Gb DDR4-3200 SDRAM | Samsung | 96FBGA
K4A8G165WC-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | YZ48G16V-F9HPI-M | K4A8G165WC-BCWE |
|---|---|---|
| Merek | Loongtion | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $38.00 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Kadar Data | 3200 MT/s | 3200 Mbps |
| Kemasan | FBGA96 | 96-FBGA |
| Gambaran Suhu Operasi | -40°C to +85°C | 0°C to +95°C |
| Tegangan Pemberi Arus | 1.2 V | — |
| Antaramuka | DDR4 | Differential (CK, /CK) |
| Kiraan Pin | 96 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Industrial Grade | Yes | — |
| Compatible with | Samsung K4A8G165WC-BCWE, Micron MT40A512M16JY-07EAIT:B | — |
| Lebar Bus Data | 16 bits | — |
| Refresh | Auto-refresh | — |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Burst Length | — | 8 (BL8) / 4 (BC4) |
| Number of Banks | — | 16 |
| Row Address Bits | — | 16 |
| Column Address Bits | — | 10 |
| JEDEC Standard | — | JEDEC DDR4 |