1N5711 vs BAT46WH Vergleich

Detaillierter Direktvergleich von 1N5711 von STMicroelectronics und BAT46WH von Nexperia. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter 1N5711 BAT46WH
Marke STMicroelectronics Nexperia
Kategorie Diodes Diodes
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,18 $0,03
Diode Type Small-signal Schottky barrier (RF) diode —
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW [DATA_NEEDED: total power dissipation Ptot]
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) 850 mV
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Gehäuse DO-35 (DO-204AH) hermetic axial-lead glass SOD-123F (flat lead) SMD
Montageart Through-Hole Surface Mount
Betriebstemperatur [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] [DATA_NEEDED: reverse leakage current IR]
RoHS-Status Compliant Compliant
Diode Configuration — Single
Technology — Planar Schottky barrier with integrated guard ring
Repetitive Peak Reverse Voltage (VRRM) — 100 V
Forward Current (IF) — 250 mA
Non-Repetitive Peak Forward Current — 2.5 A
Maximum Operating Temperature — 155 C
Terminal Position — Dual
Terminal Form — Flat
Number of Terminals — 2
Package Shape — Rectangular
Typical Applications — High-speed switching, voltage clamping, line termination, reverse polarity protection
Junction Capacitance — [DATA_NEEDED: junction capacitance]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern