1N5711 vs BAT46WH Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci 1N5711 disebabkan oleh STMicroelectronics dan BAT46WH disebabkan oleh Nexperia. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr 1N5711 BAT46WH
Merek STMicroelectronics Nexperia
Kategori Diodes Diodes
Status Lingkungan Hidup Aktif Aktif
Diode Type Small-signal Schottky barrier (RF) diode —
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW [DATA_NEEDED: total power dissipation Ptot]
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) 850 mV
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Kemasan DO-35 (DO-204AH) hermetic axial-lead glass SOD-123F (flat lead) SMD
Jenis Pemasangan Through-Hole Surface Mount
Suhu Operasi [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] [DATA_NEEDED: reverse leakage current IR]
Status RoHS Compliant Compliant
Diode Configuration — Single
Technology — Planar Schottky barrier with integrated guard ring
Repetitive Peak Reverse Voltage (VRRM) — 100 V
Forward Current (IF) — 250 mA
Non-Repetitive Peak Forward Current — 2.5 A
Maximum Operating Temperature — 155 C
Terminal Position — Dual
Terminal Form — Flat
Number of Terminals — 2
Package Shape — Rectangular
Typical Applications — High-speed switching, voltage clamping, line termination, reverse polarity protection
Junction Capacitance — [DATA_NEEDED: junction capacitance]

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