1N5711 vs BAT46WH Comparación

Comparación detallada lado a lado de 1N5711 por STMicroelectronics y BAT46WH por Nexperia. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro 1N5711 BAT46WH
Marca STMicroelectronics Nexperia
Categoría Diodes Diodes
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,18 $0,03
Diode Type Small-signal Schottky barrier (RF) diode —
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW [DATA_NEEDED: total power dissipation Ptot]
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) 850 mV
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Encapsulado DO-35 (DO-204AH) hermetic axial-lead glass SOD-123F (flat lead) SMD
Tipo de montaje Through-Hole Surface Mount
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] [DATA_NEEDED: reverse leakage current IR]
Estado RoHS Compliant Compliant
Diode Configuration — Single
Technology — Planar Schottky barrier with integrated guard ring
Repetitive Peak Reverse Voltage (VRRM) — 100 V
Forward Current (IF) — 250 mA
Non-Repetitive Peak Forward Current — 2.5 A
Maximum Operating Temperature — 155 C
Terminal Position — Dual
Terminal Form — Flat
Number of Terminals — 2
Package Shape — Rectangular
Typical Applications — High-speed switching, voltage clamping, line termination, reverse polarity protection
Junction Capacitance — [DATA_NEEDED: junction capacitance]

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