1N5711 vs BAT46WH तुलना
विस्तृत दोनों ओर की तुलना 1N5711 द्वारा STMicroelectronics और BAT46WH द्वारा Nexperia. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
विशेषता तुलना
| पैरामीटर | 1N5711 | BAT46WH |
|---|---|---|
| ब्रांड | STMicroelectronics | Nexperia |
| श्रेणी | Diodes | Diodes |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Diode Type | Small-signal Schottky barrier (RF) diode | — |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | [DATA_NEEDED: total power dissipation Ptot] |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | 850 mV |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| पैकेज | DO-35 (DO-204AH) hermetic axial-lead glass | SOD-123F (flat lead) SMD |
| माउंटिंग प्रकार | Through-Hole | Surface Mount |
| ऑपरेटिंग तापमान | [DATA_NEEDED: operating temperature range] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | [DATA_NEEDED: reverse leakage current IR] |
| RoHS स्थिति | Compliant | Compliant |
| Diode Configuration | — | Single |
| Technology | — | Planar Schottky barrier with integrated guard ring |
| Repetitive Peak Reverse Voltage (VRRM) | — | 100 V |
| Forward Current (IF) | — | 250 mA |
| Non-Repetitive Peak Forward Current | — | 2.5 A |
| Maximum Operating Temperature | — | 155 C |
| Terminal Position | — | Dual |
| Terminal Form | — | Flat |
| Number of Terminals | — | 2 |
| Package Shape | — | Rectangular |
| Typical Applications | — | High-speed switching, voltage clamping, line termination, reverse polarity protection |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |