1N5711 vs BAT46WH مقایسه
مقایسه دقیق کنار به کنار 1N5711 توسط STMicroelectronics و BAT46WH توسط Nexperia. مشخصات کلیدی، پارامترهای الکتریکی، بستهبندی، وضعیت چرخه عمر، قیمتگذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | 1N5711 | BAT46WH |
|---|---|---|
| برند | STMicroelectronics | Nexperia |
| دستهبندی | Diodes | Diodes |
| وضعیت چرخه عمر | فعال | فعال |
| Diode Type | Small-signal Schottky barrier (RF) diode | — |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | [DATA_NEEDED: total power dissipation Ptot] |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | 850 mV |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| بستهبندی | DO-35 (DO-204AH) hermetic axial-lead glass | SOD-123F (flat lead) SMD |
| نوع نصب | Through-Hole | Surface Mount |
| دمای کاری | [DATA_NEEDED: operating temperature range] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | [DATA_NEEDED: reverse leakage current IR] |
| وضعیت RoHS | Compliant | Compliant |
| Diode Configuration | — | Single |
| Technology | — | Planar Schottky barrier with integrated guard ring |
| Repetitive Peak Reverse Voltage (VRRM) | — | 100 V |
| Forward Current (IF) | — | 250 mA |
| Non-Repetitive Peak Forward Current | — | 2.5 A |
| Maximum Operating Temperature | — | 155 C |
| Terminal Position | — | Dual |
| Terminal Form | — | Flat |
| Number of Terminals | — | 2 |
| Package Shape | — | Rectangular |
| Typical Applications | — | High-speed switching, voltage clamping, line termination, reverse polarity protection |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |