1N5711 vs BAT46WH Comparação

Comparação detalhada lado a lado de 1N5711 por STMicroelectronics e BAT46WH por Nexperia. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro 1N5711 BAT46WH
Marca STMicroelectronics Nexperia
Categoria Diodes Diodes
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,18 $0,03
Diode Type Small-signal Schottky barrier (RF) diode —
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW [DATA_NEEDED: total power dissipation Ptot]
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) 850 mV
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Encapsulamento DO-35 (DO-204AH) hermetic axial-lead glass SOD-123F (flat lead) SMD
Tipo de montagem Through-Hole Surface Mount
Temperatura de operação [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] [DATA_NEEDED: reverse leakage current IR]
Status RoHS Compliant Compliant
Diode Configuration — Single
Technology — Planar Schottky barrier with integrated guard ring
Repetitive Peak Reverse Voltage (VRRM) — 100 V
Forward Current (IF) — 250 mA
Non-Repetitive Peak Forward Current — 2.5 A
Maximum Operating Temperature — 155 C
Terminal Position — Dual
Terminal Form — Flat
Number of Terminals — 2
Package Shape — Rectangular
Typical Applications — High-speed switching, voltage clamping, line termination, reverse polarity protection
Junction Capacitance — [DATA_NEEDED: junction capacitance]

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