1N5711 vs BAT46WH 比較
詳細並排比較 1N5711 由 STMicroelectronics 與 BAT46WH 由 Nexperia. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | 1N5711 | BAT46WH |
|---|---|---|
| 品牌 | STMicroelectronics | Nexperia |
| 類別 | Diodes | Diodes |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Diode Type | Small-signal Schottky barrier (RF) diode | — |
| Peak Reverse Voltage (VRRM) | 70 V | — |
| Continuous Forward Current (IF) | 15 mA | — |
| Power Dissipation | 430 mW | [DATA_NEEDED: total power dissipation Ptot] |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) | 850 mV |
| Total Capacitance | 2 pF | — |
| Junction Capacitance (Cj) | 1 pF | — |
| Dynamic Resistance | 35 ohm | — |
| Breakdown Voltage (VB) | 70 V | — |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) | — |
| Junction Structure | Metal-to-silicon junction with PN guard ring | — |
| 封裝 | DO-35 (DO-204AH) hermetic axial-lead glass | SOD-123F (flat lead) SMD |
| 安裝類型 | Through-Hole | Surface Mount |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | — |
| Reverse Leakage Current | [DATA_NEEDED: reverse leakage current at rated VR] | [DATA_NEEDED: reverse leakage current IR] |
| RoHS 狀態 | Compliant | Compliant |
| Diode Configuration | — | Single |
| Technology | — | Planar Schottky barrier with integrated guard ring |
| Repetitive Peak Reverse Voltage (VRRM) | — | 100 V |
| Forward Current (IF) | — | 250 mA |
| Non-Repetitive Peak Forward Current | — | 2.5 A |
| Maximum Operating Temperature | — | 155 C |
| Terminal Position | — | Dual |
| Terminal Form | — | Flat |
| Number of Terminals | — | 2 |
| Package Shape | — | Rectangular |
| Typical Applications | — | High-speed switching, voltage clamping, line termination, reverse polarity protection |
| Junction Capacitance | — | [DATA_NEEDED: junction capacitance] |