1N5711 vs BAT46WH Karşılaştırma

Ayrıntılı yan yana karşılaştırma 1N5711 tarafından STMicroelectronics ve BAT46WH tarafından NexperiaAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre 1N5711 BAT46WH
Marka STMicroelectronics Nexperia
Kategori Diodes Diodes
Yaşam Döngüsü Durumu Aktif Aktif
Diode Type Small-signal Schottky barrier (RF) diode —
Peak Reverse Voltage (VRRM) 70 V —
Continuous Forward Current (IF) 15 mA —
Power Dissipation 430 mW [DATA_NEEDED: total power dissipation Ptot]
Forward Voltage (VF) 0.41 V (at 1 mA, per MACOM) 850 mV
Total Capacitance 2 pF —
Junction Capacitance (Cj) 1 pF —
Dynamic Resistance 35 ohm —
Breakdown Voltage (VB) 70 V —
Switching Speed Picosecond class (ultrafast, no minority-carrier storage) —
Junction Structure Metal-to-silicon junction with PN guard ring —
Paket DO-35 (DO-204AH) hermetic axial-lead glass SOD-123F (flat lead) SMD
Montaj Türü Through-Hole Surface Mount
İşletim Sıcaklığı [DATA_NEEDED: operating temperature range] —
Reverse Leakage Current [DATA_NEEDED: reverse leakage current at rated VR] [DATA_NEEDED: reverse leakage current IR]
RoHS Durumu Compliant Compliant
Diode Configuration — Single
Technology — Planar Schottky barrier with integrated guard ring
Repetitive Peak Reverse Voltage (VRRM) — 100 V
Forward Current (IF) — 250 mA
Non-Repetitive Peak Forward Current — 2.5 A
Maximum Operating Temperature — 155 C
Terminal Position — Dual
Terminal Form — Flat
Number of Terminals — 2
Package Shape — Rectangular
Typical Applications — High-speed switching, voltage clamping, line termination, reverse polarity protection
Junction Capacitance — [DATA_NEEDED: junction capacitance]

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