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Alliance Memory

AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory

Teilenummer: AS4C512M16D4A-62BCNTR ✓ Aktiv
Auf Lager Versand in 1–3 Werktagen
1.14V ~ 1.26V (nominal 1.2V) Vdss 96-FBGA (7.5x13 mm) Package 1600 MHz (DDR4-3200) Speed DDR4 SDRAM Memory
Ab $8.1 USD / Stück
MOQ: 1 |
Preis aktualisiert: 2026-08-20
Mengenpreise
Menge Stückpreis Gesamt
1 $12.5 $12,50
10 $11.2 $112,00
100 $9.8 $980,00
500 $8.9 $4.450,00
1.000 $8.1 $8.100,00
ℹ️ Alle Preise sind in USD

AS4C512M16D4A-62BCNTR Übersicht

The AS4C512M16D4A-62BCNTR is an 8Gb DDR4 SDRAM organized as 512M x 16 bits, operating at 1.2V with a fast clock rate of 1600MHz (DDR4-3200). It is housed in a 96-ball FBGA package (7.5x13mm) and is JEDEC standard compliant, ensuring compatibility with standard DDR4 memory controllers. This device is designed for high-bandwidth, low-power applications, making it ideal for networking, computing, and industrial systems.

DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption. DDR4 is the industry standard for modern computing, offering higher density and speed while maintaining backward compatibility with JEDEC standards.

Key features include a 1.2V power supply, 1600MHz clock rate (PC4-3200), 18ns CAS latency, and a 96-ball FBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is available in commercial temperature range (0°C to +95°C) and is RoHS compliant.

The AS4C512M16D4A-62BCNTR uses a 20nm-class process technology, offering high density and low power. It features a 16n prefetch architecture, which improves bandwidth efficiency. The device includes a temperature sensor for thermal management and supports DLL (Delay-Locked Loop) for precise timing.

Typical applications include servers, networking equipment, industrial PCs, and embedded systems requiring high-capacity, high-speed memory. Its 512M x 16 organization is ideal for systems with a 16-bit data bus, such as high-end routers and switches.

When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.2V supply and a separate VPP (2.5V) for wordline boost, which must be generated correctly.

Drop-in-Alternativen für AS4C512M16D4A-62BCNTR – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.

Varianten dieser Serie

Modelle derselben Serie, die drop-in-kompatibel sind mit AS4C512M16D4A-62BCNTR (gleiche Bauform und Footprint) – abweichend in Data Rate, Package, Operating Temperature Range, Interface, Supply Voltage.

Alliance Memory
Data Rate: 2666 Mbps per pin
Package: 96-ball FBGA (7.5 x 13 mm)
Operating Temperature Range: 0C to +95C (case, commercial)
Vergleichen mit AS4C512M16D4A-62BCNTR →
Alliance Memory
Data Rate: 1600 MHz (3200 Mbps)
Supply Voltage: 1.2 V
Vergleichen mit AS4C512M16D4A-62BCNTR →
Alliance Memory
Data Rate: 3200 Mbps per pin
Package: 96-FBGA (7.5x13mm)
Vergleichen mit AS4C512M16D4A-62BCNTR →
Alliance Memory
Interface: Parallel
Supply Voltage: 1.2 V (1.14V to 1.26V)
Vergleichen mit AS4C512M16D4A-62BCNTR →
Samsung Electronics
Data Rate: 3200 Mbps
Package: 96-FBGA
Operating Temperature Range: 0°C to +95°C
Vergleichen mit AS4C512M16D4A-62BCNTR →
Micron Technology
Data Rate: 1600 MHz (DDR4-3200)
Operating Temperature Range: 0°C to +95°C (standard), -40°C to +95°C (IT)
Interface: Parallel
Vergleichen mit AS4C512M16D4A-62BCNTR →
Nanya Technology
Data Rate: 3200 Mbps (DDR4-3200)
Package: TFBGA-96
Operating Temperature Range: -40°C to +95°C
Vergleichen mit AS4C512M16D4A-62BCNTR →

Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:

AS4C512M16D4A-62BCN

✅ Drop-In
Alliance Memory
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.2 V · 1600 MHz (3200 Mbps) · 18 ns · 96-FBGA (7.5x13 mm) · 0°C to 95°C

✓ Auf Lager

$7.2 / Stück

Datenblatt ansehen →

AS4C512M16D4A-62BIN

✅ Drop-In
Alliance Memory
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz · 3200 Mbps per pin · 1.14V ~ 1.26V (nominal 1.2V) · -40°C to +95°C · 96-FBGA (7.5x13mm)

✓ Auf Lager

$8.1 / Stück

Datenblatt ansehen →

AS4C512M16D4B-62BCNTR

✅ Drop-In
Alliance Memory
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit (512M x 16) · 3200 MT/s · 1600 MHz · 19 ns · 1.2 V (1.14V to 1.26V) · Parallel · 96-FBGA (7.5x13 mm)

✓ Auf Lager

$8.1 / Stück

Datenblatt ansehen →

MT40A512M16TB-062E

✅ Drop-In ⚠️ Spezifikationen ungeprüft
Micron Technology
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1600 MHz (DDR4-3200) · 1.2V ±60mV · 2.5V, -125mV, +250mV · 19 ns · 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C

✓ Auf Lager

$60 / Stück

Datenblatt ansehen →

K4A8G165WC-BCWE

✅ Drop-In ⚠️ Spezifikationen ungeprüft
Samsung Electronics
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gb · 512M x 16 · 3200 Mbps · 1.2 V · 2.5 V · 0°C to +95°C · 96-FBGA

✓ Auf Lager

$38 / Stück

Datenblatt ansehen →

NT5AD512M16C4-JRI

✅ Drop-In ⚠️ Spezifikationen ungeprüft
Nanya Technology
📦 96-FBGA (7.5x13)
DDR4 SDRAM · 8 Gbit · 512M x 16 · 3200 Mbps (DDR4-3200) · 1.2 V · -40°C to +95°C · TFBGA-96 · Surface Mount

✓ Auf Lager

$75.58 / Stück

Datenblatt ansehen →

AS4C512M16D4A-62BCNTR Grenzwerte & elektrische Eigenschaften

Speichertyp DDR4 SDRAM
Speichergröße 8 Gbit (512M x 16)
Versorgungsspannung 1.14V ~ 1.26V (nominal 1.2V)
Clock Rate 1600 MHz (DDR4-3200)
CAS-Latenz 18 ns
Gehäuse 96-FBGA (7.5x13 mm)
Betriebstemperatur 0°C to +95°C (Commercial)
Schnittstelle POD (Pseudo Open Drain)
Datenrate 3200 MT/s
Refresh Auto-refresh and self-refresh
RoHS Compliant
Moisture Sensitivity Level 3 (168 Hours)
Write Cycle Time - Word, Page 15 ns
Montageart Surface Mount
Standard Pack 1500/reel (Tape & Reel)

AS4C512M16D4A-62BCNTR Pin-Konfiguration

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pin A1 VDD — Power supply (1.2V)
Pin A2 DQ0 — Data input/output 0
Pin A3 DQ1 — Data input/output 1
Pin A4 VSS — Ground
Pin A5 DQ2 — Data input/output 2
Pin A6 DQ3 — Data input/output 3
Pin A7 VDD — Power supply (1.2V)
Pin A8 DQ4 — Data input/output 4
Pin A9 DQ5 — Data input/output 5
Pin A10 VSS — Ground
Pin A11 DQ6 — Data input/output 6
Pin A12 DQ7 — Data input/output 7
Pin B1 VDDQ — DQ power supply (1.2V)
Pin B2 VSSQ — DQ ground
Pin B3 DM0 — Data mask 0
Pin B4 DQS0_t — Data strobe 0 (true)
Pin B5 DQS0_c — Data strobe 0 (complement)
Pin B6 VSSQ — DQ ground
Pin B7 VDDQ — DQ power supply (1.2V)
Pin B8 DM1 — Data mask 1
Pin B9 DQS1_t — Data strobe 1 (true)
Pin B10 DQS1_c — Data strobe 1 (complement)
Pin B11 VSSQ — DQ ground
Pin B12 VDDQ — DQ power supply (1.2V)
Pin C1 A0 — Address input 0
Pin C2 A1 — Address input 1
Pin C3 A2 — Address input 2
Pin C4 A3 — Address input 3
Pin C5 A4 — Address input 4
Pin C6 A5 — Address input 5
Pin C7 A6 — Address input 6
Pin C8 A7 — Address input 7
Pin C9 A8 — Address input 8
Pin C10 A9 — Address input 9
Pin C11 A10/AP — Address input 10 / Auto-precharge
Pin C12 A11 — Address input 11
Pin D1 A12 — Address input 12
Pin D2 A13 — Address input 13
Pin D3 A14 — Address input 14
Pin D4 A15 — Address input 15
Pin D5 BA0 — Bank address 0
Pin D6 BA1 — Bank address 1
Pin D7 BG0 — Bank group 0
Pin D8 BG1 — Bank group 1
Pin D9 CKE — Clock enable
Pin D10 CS_n — Chip select (active low)
Pin D11 ODT — On-die termination
Pin D12 RAS_n — Row address strobe (active low)
Pin E1 CAS_n — Column address strobe (active low)
Pin E2 WE_n — Write enable (active low)
Pin E3 ACT_n — Activate (active low)
Pin E4 PAR — Parity input
Pin E5 ALERT_n — Alert output (active low)
Pin E6 RESET_n — Reset (active low)
Pin E7 VDD — Power supply (1.2V)
Pin E8 VSS — Ground
Pin E9 VPP — Wordline boost supply (2.5V)
Pin E10 VDD — Power supply (1.2V)
Pin E11 VSS — Ground
Pin E12 VDDQ — DQ power supply (1.2V)
Pin F1 VSSQ — DQ ground
Pin F2 DQ8 — Data input/output 8
Pin F3 DQ9 — Data input/output 9
Pin F4 VDDQ — DQ power supply (1.2V)
Pin F5 DQ10 — Data input/output 10
Pin F6 DQ11 — Data input/output 11
Pin F7 VSSQ — DQ ground
Pin F8 DQ12 — Data input/output 12
Pin F9 DQ13 — Data input/output 13
Pin F10 VDDQ — DQ power supply (1.2V)
Pin F11 DQ14 — Data input/output 14
Pin F12 DQ15 — Data input/output 15
Pin G1 VSS — Ground
Pin G2 VDD — Power supply (1.2V)
Pin G3 VSS — Ground
Pin G4 VDD — Power supply (1.2V)
Pin G5 VSS — Ground
Pin G6 VDD — Power supply (1.2V)
Pin G7 VSS — Ground
Pin G8 VDD — Power supply (1.2V)
Pin G9 VSS — Ground
Pin G10 VDD — Power supply (1.2V)
Pin G11 VSS — Ground
Pin G12 VDD — Power supply (1.2V)
Pin H1 NC — No connect
Pin H2 NC — No connect
Pin H3 NC — No connect
Pin H4 NC — No connect
Pin H5 NC — No connect
Pin H6 NC — No connect
Pin H7 NC — No connect
Pin H8 NC — No connect
Pin H9 NC — No connect
Pin H10 NC — No connect
Pin H11 NC — No connect
Pin H12 NC — No connect

Typische Anwendungen

AS4C512M16D4A-62BCNTR ist geeignet für 6 Anwendungs: Networking Equipment, Industrial Computing, Data Center Servers, Consumer Electronics, Automotive Infotainment, Telecommunications.

🌐

Networking Equipment

The AS4C512M16D4A-62BCNTR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 MT/s data rate support packet buffering, routing tables, and flow processing. The 1.2V operation reduces power consumption in always-on network infrastructure. With a 96-ball FBGA package, it fits compact line cards. The commercial temperature range is suitable for indoor networking equipment. Its JEDEC compliance ensures compatibility with standard DDR4 controllers used in network processors.

🏭

Industrial Computing

In industrial PCs and embedded systems, the AS4C512M16D4A-62BCNTR offers reliable, high-speed memory for data acquisition, control, and HMI applications. Its 8Gb density supports large application footprints and data logging. The 1.2V supply reduces heat generation, important in sealed enclosures. The 96-ball FBGA package is robust for vibration-prone environments. The commercial temperature range (0°C to +95°C) is adequate for most factory floors. JEDEC compliance ensures easy integration with standard industrial motherboards.

🖥️

Data Center Servers

The AS4C512M16D4A-62BCNTR is ideal for server main memory, providing 8Gb capacity per chip to build large-capacity DIMMs. Its 3200 MT/s data rate meets the bandwidth demands of cloud computing and virtualization. The 1.2V operation contributes to energy efficiency in data centers. The 96-ball FBGA package is standard for DDR4 RDIMMs and UDIMMs. The commercial temperature range is suitable for controlled server environments. JEDEC compliance ensures compatibility with server memory controllers.

📺

Consumer Electronics

In high-end consumer devices like gaming consoles, set-top boxes, and smart TVs, the AS4C512M16D4A-62BCNTR provides fast, low-power memory for smooth graphics and multitasking. Its 8Gb capacity supports large media buffers and app data. The 1.2V supply extends battery life in portable devices. The 96-ball FBGA package is compact for slim designs. The commercial temperature range covers typical consumer use. JEDEC compliance ensures compatibility with consumer SoCs.

🚗

Automotive Infotainment

Although the commercial temperature grade limits extreme automotive use, the AS4C512M16D4A-62BCNTR can be used in infotainment systems operating in controlled cabin environments. Its 8Gb capacity supports navigation maps, media playback, and instrument cluster graphics. The 1.2V operation reduces heat in the dashboard. The 96-ball FBGA package withstands vibration. For under-hood applications, consider the industrial grade AS4C512M16D4A-62BIN. JEDEC compliance ensures compatibility with automotive SoCs.

📡

Telecommunications

In telecom base stations and switches, the AS4C512M16D4A-62BCNTR provides high-bandwidth memory for signal processing and protocol handling. Its 8Gb density supports large buffers for voice and data traffic. The 1.2V supply reduces power in remote radio units. The 96-ball FBGA package is suitable for compact line cards. The commercial temperature range is acceptable for indoor telecom equipment. JEDEC compliance ensures compatibility with telecom processors.

What is the memory size and organization of AS4C512M16D4A-62BCNTR?
The AS4C512M16D4A-62BCNTR is an 8Gb DDR4 SDRAM organized as 512M x 16 bits. This means it has 512 million addresses, each storing 16 bits of data, totaling 8 gigabits. According to the Alliance Memory datasheet, it is a 512M x 16 bit DDR4 Synchronous DRAM.
What is the operating voltage of AS4C512M16D4A-62BCNTR?
The AS4C512M16D4A-62BCNTR operates at a nominal 1.2V supply voltage, with a range of 1.14V to 1.26V. This low voltage is characteristic of DDR4 memory, reducing power consumption compared to DDR3's 1.5V. The datasheet specifies VDD = 1.2V typical.
What is the clock speed of AS4C512M16D4A-62BCNTR?
The AS4C512M16D4A-62BCNTR has a clock rate of 1600MHz, corresponding to DDR4-3200 with a data rate of 3200 MT/s. This is the maximum clock frequency supported by the device, as stated in the Alliance Memory datasheet.
What is the package type of AS4C512M16D4A-62BCNTR?
The AS4C512M16D4A-62BCNTR is housed in a 96-ball FBGA package with dimensions of 7.5x13mm. This is a standard DDR4 package, and the 'TR' suffix indicates tape and reel packaging with 1500 units per reel.
What is the operating temperature range of AS4C512M16D4A-62BCNTR?
The AS4C512M16D4A-62BCNTR operates over a commercial temperature range of 0°C to +95°C. This is specified in the datasheet and is suitable for most consumer and industrial applications. For extended temperature ranges, consider the industrial grade variant AS4C512M16D4A-62BIN.
Is AS4C512M16D4A-62BCNTR RoHS compliant?
Yes, the AS4C512M16D4A-62BCNTR is RoHS compliant. This is confirmed by the datasheet and distributor listings. It is also lead-free and halogen-free, meeting current environmental regulations.
What is the CAS latency of AS4C512M16D4A-62BCNTR?
The CAS latency of AS4C512M16D4A-62BCNTR is 18ns. This is the time delay between the column address strobe and the availability of data. It is a key timing parameter for memory performance, and this value is specified in the datasheet.
What is the difference between AS4C512M16D4A-62BCNTR and AS4C512M16D4A-62BCN?
The AS4C512M16D4A-62BCNTR and AS4C512M16D4A-62BCN are electrically identical; the only difference is packaging. The 'TR' suffix denotes tape and reel packaging (1500 units per reel), while the non-TR version is typically in tray packaging. Both are 96-ball FBGA and have the same specifications.
What is the difference between AS4C512M16D4A-62BCNTR and AS4C512M16D4B-62BCNTR?
The AS4C512M16D4B-62BCNTR is a newer revision of the same 8Gb DDR4 SDRAM. The 'B' version has a slightly different CAS latency (19ns vs 18ns) and may have minor timing improvements. Both are pin-compatible and can be used as drop-in replacements, but verify timing requirements for your design.
What is the best drop-in replacement for AS4C512M16D4A-62BCNTR?
The best drop-in replacement for AS4C512M16D4A-62BCNTR is the AS4C512M16D4B-62BCNTR from Alliance Memory, as it is pin-compatible and has similar specifications. Other cross-brand options include Micron's MT40A512M16TB-062E and Samsung's K4A8G165WC-BCWE, both in 96-ball FBGA, but verify pinout and timing compatibility.
Where can I buy AS4C512M16D4A-62BCNTR online?
AS4C512M16D4A-62BCNTR is available from major distributors including Mouser, DigiKey, and Newark. As of 2026-08-20, it is in stock at these distributors. You can also purchase directly from Alliance Memory or through authorized distributors. Prices start at approximately $12.50 for single units.
What is the price of AS4C512M16D4A-62BCNTR?
As of 2026-08-20, the price of AS4C512M16D4A-62BCNTR is approximately $12.50 for a single unit, with volume pricing dropping to around $8.10 at 1000 units. Prices vary by distributor and quantity, so check current quotes on Mouser or DigiKey.
What is the lead time for AS4C512M16D4A-62BCNTR?
The lead time for AS4C512M16D4A-62BCNTR is typically 8-12 weeks for large orders, but it is currently in stock at major distributors like Mouser and DigiKey, so immediate shipment is possible for small quantities. For bulk orders, contact Alliance Memory for current lead times.
Is AS4C512M16D4A-62BCNTR in stock?
Yes, AS4C512M16D4A-62BCNTR is in stock at Mouser, DigiKey, and Newark as of 2026-08-20. Availability can change quickly, so check the distributor websites for real-time inventory. The 'TR' version is commonly stocked in tape and reel packaging.
Where can I download the AS4C512M16D4A-62BCNTR datasheet PDF?
The AS4C512M16D4A-62BCNTR datasheet is available for download from the Alliance Memory website at https://www.alliancememory.com/wp-content/uploads/AllianceMemory_8Gb_DDR4_AS4C512M16D4A-62BIN-62BCN_Datasheet_ver1.0_28Jun.pdf. It is also accessible via distributor product pages like Mouser and DigiKey.
What are the key specifications of AS4C512M16D4A-62BCNTR that engineers should know?
The AS4C512M16D4A-62BCNTR is an 8Gb DDR4 SDRAM with 512M x 16 organization, 1.2V supply, 1600MHz clock (DDR4-3200), 18ns CAS latency, and 96-ball FBGA package. It operates from 0°C to +95°C and is RoHS compliant. These specs make it suitable for high-bandwidth applications like networking and computing.
Can AS4C512M16D4A-62BCNTR be used in automotive applications?
The AS4C512M16D4A-62BCNTR is a commercial temperature grade device (0°C to +95°C), so it is not recommended for automotive applications that require AEC-Q100 qualification or extended temperature ranges. For automotive, consider industrial grade variants or AEC-Q100 qualified DDR4 from other manufacturers.
What is the difference between AS4C512M16D4A-62BCNTR and AS4C512M16D4A-62BIN?
The AS4C512M16D4A-62BCNTR is the commercial temperature version (0°C to +95°C), while the AS4C512M16D4A-62BIN is the industrial temperature version (-40°C to +95°C). Both have the same 8Gb density and 512M x 16 organization, but the industrial version is more expensive and suitable for harsh environments.
What is the best Samsung equivalent for AS4C512M16D4A-62BCNTR?
The best Samsung equivalent for AS4C512M16D4A-62BCNTR is the K4A8G165WC-BCWE, which is an 8Gb DDR4 SDRAM in a 96-ball FBGA package. It has similar specifications, including 1.2V supply and 1600MHz clock. Verify pinout and timing compatibility before use.
What is the best Micron equivalent for AS4C512M16D4A-62BCNTR?
The best Micron equivalent for AS4C512M16D4A-62BCNTR is the MT40A512M16TB-062E, which is an 8Gb DDR4 SDRAM in a 96-ball FBGA package. It operates at 1.2V and supports 1600MHz clock. Verify pinout and timing compatibility before use.
What is the best Nanya equivalent for AS4C512M16D4A-62BCNTR?
The best Nanya equivalent for AS4C512M16D4A-62BCNTR is the NT5AD512M16C4-JRI, which is an 8Gb DDR4 SDRAM in a 96-ball FBGA package. It has similar specifications, including 1.2V supply and 1600MHz clock. Verify pinout and timing compatibility before use.

Technische Referenzdaten für AS4C512M16D4A-62BCNTR – Vergleich, Designhinweise und Compliance-Informationen.

Auswahlhilfe

Choose the AS4C512M16D4A-62BCNTR when you need an 8Gb DDR4 SDRAM in a 96-ball FBGA package with commercial temperature range and tape and reel packaging for automated assembly. It is ideal for networking, industrial computing, and consumer electronics. If you require industrial temperature range, select the AS4C512M16D4A-62BIN. For a newer revision with slightly different timing, consider the AS4C512M16D4B-62BCNTR. Cross-brand alternatives from Micron, Samsung, and Nanya are available but require verification of timing parameters and pinout. The AS4C512M16D4A-62BCNTR offers a balance of performance, cost, and availability, making it a solid choice for most applications.

Vergleich mit Alternativen

Parameter Dieses Produkt AS4C512M16D4A-62BCN AS4C512M16D4A-62BIN AS4C512M16D4B-62BCNTR MT40A512M16TB-062E K4A8G165WC-BCWE NT5AD512M16C4-JRI
Package 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13) 96-FBGA (7.5x13)
Brand Alliance Memory Alliance Memory Alliance Memory Alliance Memory Micron Technology Samsung Electronics NXP Semiconductors
Memory Size 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16 512M x 16
Supply Voltage 1.2V (1.14-1.26V) 1.2V (1.14-1.26V) 1.2V (1.14-1.26V) 1.2V (1.14-1.26V) 1.2V (1.14-1.26V) 1.2V (1.14-1.26V) 1.2V (1.14-1.26V)
Clock Rate 1600 MHz 1600 MHz 1600 MHz 1600 MHz 1600 MHz 1600 MHz 1600 MHz

Wichtigste Unterscheidungsmerkmale

  • Commercial temperature grade with 0°C to +95°C range (vs. AS4C512M16D4A-62BIN)
  • CAS latency of 18ns (vs. AS4C512M16D4B-62BCNTR)
  • Tape and reel packaging for automated assembly (vs. AS4C512M16D4A-62BCN)

Designhinweise

The AS4C512M16D4A-62BCNTR requires a 1.2V VDD supply and a separate 2.5V VPP supply for wordline boost. Ensure these supplies are clean and well-regulated. Use 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. The VPP supply should be capable of sourcing transient current during write operations.

For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Use ground planes beneath the FBGA package to minimize noise. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.

The AS4C512M16D4A-62BCNTR has a maximum operating temperature of +95°C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB copper. Monitor junction temperature to avoid exceeding the absolute maximum rating of +95°C.

Compliance-Informationen

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Qualified
Bleifrei
Yes
Halogenfrei
Unknown
Konfliktmineralien
Unknown

RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.

Daten verifiziert am: 2026-08-20 – Daten geprüft und kuratiert vom Bauteil-Engineering-Team von XAIPART

Ähnliche Suchanfragen

AS4C512M16D4A-62BCNTR datasheet AS4C512M16D4A-62BCNTR price AS4C512M16D4A-62BCNTR buy Alliance Memory AS4C512M16D4A-62BCNTR 8Gb DDR4 SDRAM 512Mx16 96-FBGA DDR4 memory AS4C512M16D4A-62BCNTR vs AS4C512M16D4B-62BCNTR AS4C512M16D4A-62BCNTR equivalent DDR4 1600MHz 1.2V memory AS4C512M16D4A-62BCNTR in stock

Verwandte Bauteile & Begriffe

Alliance Memory AS4C512M16D4A-62BCNTR AS4C512M16D4A-62BCN AS4C512M16D4A-62BIN AS4C512M16D4B-62BCNTR MT40A512M16TB-062E K4A8G165WC-BCWE NT5AD512M16C4-JRI DDR4 SDRAM SDRAM DRAM Memory IC JEDEC RoHS 96-FBGA FBGA Surface Mount 1.2V 1600MHz 512M x 16 8Gb Commercial Temperature Tape & Reel Networking Industrial Computing
Schnellangebot-RFQ
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