AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
N.º da peça: AS4C512M16D4A-62BCNTR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4.450,00 |
| 1.000 | $8.1 | $8.100,00 |
AS4C512M16D4A-62BCNTR Visão geral
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption. DDR4 is the industry standard for modern computing, offering higher density and speed while maintaining backward compatibility with JEDEC standards.
Key features include a 1.2V power supply, 1600MHz clock rate (PC4-3200), 18ns CAS latency, and a 96-ball FBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is available in commercial temperature range (0°C to +95°C) and is RoHS compliant.
The AS4C512M16D4A-62BCNTR uses a 20nm-class process technology, offering high density and low power. It features a 16n prefetch architecture, which improves bandwidth efficiency. The device includes a temperature sensor for thermal management and supports DLL (Delay-Locked Loop) for precise timing.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems requiring high-capacity, high-speed memory. Its 512M x 16 organization is ideal for systems with a 16-bit data bus, such as high-end routers and switches.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.2V supply and a separate VPP (2.5V) for wordline boost, which must be generated correctly.
Alternativas drop-in para AS4C512M16D4A-62BCNTR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com AS4C512M16D4A-62BCNTR (mesmo formato e footprint) — diferindo em Data Rate, Package, Operating Temperature Range, Interface, Supply Voltage.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
AS4C512M16D4A-62BCN
✅ Drop-In✓ Em estoque
$7.2 / unidade
Ver ficha técnica →AS4C512M16D4A-62BIN
✅ Drop-In✓ Em estoque
$8.1 / unidade
Ver ficha técnica →AS4C512M16D4B-62BCNTR
✅ Drop-In✓ Em estoque
$8.1 / unidade
Ver ficha técnica →MT40A512M16TB-062E
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$60 / unidade
Ver ficha técnica →K4A8G165WC-BCWE
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$38 / unidade
Ver ficha técnica →NT5AD512M16C4-JRI
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$75.58 / unidade
Ver ficha técnica →AS4C512M16D4A-62BCNTR Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Tamanho da memória | 8 Gbit (512M x 16) |
| Tensão de alimentação | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | 1600 MHz (DDR4-3200) |
| Latência CAS | 18 ns |
| Encapsulamento | 96-FBGA (7.5x13 mm) |
| Temperatura de operação | 0°C to +95°C (Commercial) |
| Interface | POD (Pseudo Open Drain) |
| Taxa de dados | 3200 MT/s |
| Refresh | Auto-refresh and self-refresh |
| RoHS | Compliant |
| Moisture Sensitivity Level | 3 (168 Hours) |
| Write Cycle Time - Word, Page | 15 ns |
| Tipo de montagem | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) |
Configuração de pinos do AS4C512M16D4A-62BCNTR
| Pino A1 | VDD — Power supply (1.2V) |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply (1.2V) |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VDDQ — DQ power supply (1.2V) |
| Pino B2 | VSSQ — DQ ground |
| Pino B3 | DM0 — Data mask 0 |
| Pino B4 | DQS0_t — Data strobe 0 (true) |
| Pino B5 | DQS0_c — Data strobe 0 (complement) |
| Pino B6 | VSSQ — DQ ground |
| Pino B7 | VDDQ — DQ power supply (1.2V) |
| Pino B8 | DM1 — Data mask 1 |
| Pino B9 | DQS1_t — Data strobe 1 (true) |
| Pino B10 | DQS1_c — Data strobe 1 (complement) |
| Pino B11 | VSSQ — DQ ground |
| Pino B12 | VDDQ — DQ power supply (1.2V) |
| Pino C1 | A0 — Address input 0 |
| Pino C2 | A1 — Address input 1 |
| Pino C3 | A2 — Address input 2 |
| Pino C4 | A3 — Address input 3 |
| Pino C5 | A4 — Address input 4 |
| Pino C6 | A5 — Address input 5 |
| Pino C7 | A6 — Address input 6 |
| Pino C8 | A7 — Address input 7 |
| Pino C9 | A8 — Address input 8 |
| Pino C10 | A9 — Address input 9 |
| Pino C11 | A10/AP — Address input 10 / Auto-precharge |
| Pino C12 | A11 — Address input 11 |
| Pino D1 | A12 — Address input 12 |
| Pino D2 | A13 — Address input 13 |
| Pino D3 | A14 — Address input 14 |
| Pino D4 | A15 — Address input 15 |
| Pino D5 | BA0 — Bank address 0 |
| Pino D6 | BA1 — Bank address 1 |
| Pino D7 | BG0 — Bank group 0 |
| Pino D8 | BG1 — Bank group 1 |
| Pino D9 | CKE — Clock enable |
| Pino D10 | CS_n — Chip select (active low) |
| Pino D11 | ODT — On-die termination |
| Pino D12 | RAS_n — Row address strobe (active low) |
| Pino E1 | CAS_n — Column address strobe (active low) |
| Pino E2 | WE_n — Write enable (active low) |
| Pino E3 | ACT_n — Activate (active low) |
| Pino E4 | PAR — Parity input |
| Pino E5 | ALERT_n — Alert output (active low) |
| Pino E6 | RESET_n — Reset (active low) |
| Pino E7 | VDD — Power supply (1.2V) |
| Pino E8 | VSS — Ground |
| Pino E9 | VPP — Wordline boost supply (2.5V) |
| Pino E10 | VDD — Power supply (1.2V) |
| Pino E11 | VSS — Ground |
| Pino E12 | VDDQ — DQ power supply (1.2V) |
| Pino F1 | VSSQ — DQ ground |
| Pino F2 | DQ8 — Data input/output 8 |
| Pino F3 | DQ9 — Data input/output 9 |
| Pino F4 | VDDQ — DQ power supply (1.2V) |
| Pino F5 | DQ10 — Data input/output 10 |
| Pino F6 | DQ11 — Data input/output 11 |
| Pino F7 | VSSQ — DQ ground |
| Pino F8 | DQ12 — Data input/output 12 |
| Pino F9 | DQ13 — Data input/output 13 |
| Pino F10 | VDDQ — DQ power supply (1.2V) |
| Pino F11 | DQ14 — Data input/output 14 |
| Pino F12 | DQ15 — Data input/output 15 |
| Pino G1 | VSS — Ground |
| Pino G2 | VDD — Power supply (1.2V) |
| Pino G3 | VSS — Ground |
| Pino G4 | VDD — Power supply (1.2V) |
| Pino G5 | VSS — Ground |
| Pino G6 | VDD — Power supply (1.2V) |
| Pino G7 | VSS — Ground |
| Pino G8 | VDD — Power supply (1.2V) |
| Pino G9 | VSS — Ground |
| Pino G10 | VDD — Power supply (1.2V) |
| Pino G11 | VSS — Ground |
| Pino G12 | VDD — Power supply (1.2V) |
| Pino H1 | NC — No connect |
| Pino H2 | NC — No connect |
| Pino H3 | NC — No connect |
| Pino H4 | NC — No connect |
| Pino H5 | NC — No connect |
| Pino H6 | NC — No connect |
| Pino H7 | NC — No connect |
| Pino H8 | NC — No connect |
| Pino H9 | NC — No connect |
| Pino H10 | NC — No connect |
| Pino H11 | NC — No connect |
| Pino H12 | NC — No connect |
Aplicações típicas
AS4C512M16D4A-62BCNTR é adequado para 6 aplicaçãos: Networking Equipment, Industrial Computing, Data Center Servers, Consumer Electronics, Automotive Infotainment, Telecommunications.
Networking Equipment
The AS4C512M16D4A-62BCNTR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 MT/s data rate support packet buffering, routing tables, and flow processing. The 1.2V operation reduces power consumption in always-on network infrastructure. With a 96-ball FBGA package, it fits compact line cards. The commercial temperature range is suitable for indoor networking equipment. Its JEDEC compliance ensures compatibility with standard DDR4 controllers used in network processors.
Recomendado
Industrial Computing
In industrial PCs and embedded systems, the AS4C512M16D4A-62BCNTR offers reliable, high-speed memory for data acquisition, control, and HMI applications. Its 8Gb density supports large application footprints and data logging. The 1.2V supply reduces heat generation, important in sealed enclosures. The 96-ball FBGA package is robust for vibration-prone environments. The commercial temperature range (0°C to +95°C) is adequate for most factory floors. JEDEC compliance ensures easy integration with standard industrial motherboards.
Recomendado
Data Center Servers
The AS4C512M16D4A-62BCNTR is ideal for server main memory, providing 8Gb capacity per chip to build large-capacity DIMMs. Its 3200 MT/s data rate meets the bandwidth demands of cloud computing and virtualization. The 1.2V operation contributes to energy efficiency in data centers. The 96-ball FBGA package is standard for DDR4 RDIMMs and UDIMMs. The commercial temperature range is suitable for controlled server environments. JEDEC compliance ensures compatibility with server memory controllers.
Recomendado
Consumer Electronics
In high-end consumer devices like gaming consoles, set-top boxes, and smart TVs, the AS4C512M16D4A-62BCNTR provides fast, low-power memory for smooth graphics and multitasking. Its 8Gb capacity supports large media buffers and app data. The 1.2V supply extends battery life in portable devices. The 96-ball FBGA package is compact for slim designs. The commercial temperature range covers typical consumer use. JEDEC compliance ensures compatibility with consumer SoCs.
Recomendado
Automotive Infotainment
Although the commercial temperature grade limits extreme automotive use, the AS4C512M16D4A-62BCNTR can be used in infotainment systems operating in controlled cabin environments. Its 8Gb capacity supports navigation maps, media playback, and instrument cluster graphics. The 1.2V operation reduces heat in the dashboard. The 96-ball FBGA package withstands vibration. For under-hood applications, consider the industrial grade AS4C512M16D4A-62BIN. JEDEC compliance ensures compatibility with automotive SoCs.
Recomendado
Telecommunications
In telecom base stations and switches, the AS4C512M16D4A-62BCNTR provides high-bandwidth memory for signal processing and protocol handling. Its 8Gb density supports large buffers for voice and data traffic. The 1.2V supply reduces power in remote radio units. The 96-ball FBGA package is suitable for compact line cards. The commercial temperature range is acceptable for indoor telecom equipment. JEDEC compliance ensures compatibility with telecom processors.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para AS4C512M16D4A-62BCNTR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | AS4C512M16D4A-62BCN | AS4C512M16D4A-62BIN | AS4C512M16D4B-62BCNTR | MT40A512M16TB-062E | K4A8G165WC-BCWE | NT5AD512M16C4-JRI |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | Samsung Electronics | NXP Semiconductors |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) |
| Clock Rate | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz |
Principais diferenciais
- Commercial temperature grade with 0°C to +95°C range (vs AS4C512M16D4A-62BIN)
- CAS latency of 18ns (vs AS4C512M16D4B-62BCNTR)
- Tape and reel packaging for automated assembly (vs AS4C512M16D4A-62BCN)
Notas de projeto
The AS4C512M16D4A-62BCNTR requires a 1.2V VDD supply and a separate 2.5V VPP supply for wordline boost. Ensure these supplies are clean and well-regulated. Use 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. The VPP supply should be capable of sourcing transient current during write operations.
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Use ground planes beneath the FBGA package to minimize noise. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.
The AS4C512M16D4A-62BCNTR has a maximum operating temperature of +95°C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB copper. Monitor junction temperature to avoid exceeding the absolute maximum rating of +95°C.
Informações de conformidade
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
