AS4C512M16D4A-62BCNTR - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
Référence : AS4C512M16D4A-62BCNTR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.9 | $4 450,00 |
| 1 000 | $8.1 | $8 100,00 |
AS4C512M16D4A-62BCNTR Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption. DDR4 is the industry standard for modern computing, offering higher density and speed while maintaining backward compatibility with JEDEC standards.
Key features include a 1.2V power supply, 1600MHz clock rate (PC4-3200), 18ns CAS latency, and a 96-ball FBGA package. The device supports on-die termination (ODT), programmable read/write latencies, and auto-refresh and self-refresh modes. It is available in commercial temperature range (0°C to +95°C) and is RoHS compliant.
The AS4C512M16D4A-62BCNTR uses a 20nm-class process technology, offering high density and low power. It features a 16n prefetch architecture, which improves bandwidth efficiency. The device includes a temperature sensor for thermal management and supports DLL (Delay-Locked Loop) for precise timing.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems requiring high-capacity, high-speed memory. Its 512M x 16 organization is ideal for systems with a 16-bit data bus, such as high-end routers and switches.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a 1.2V supply and a separate VPP (2.5V) for wordline boost, which must be generated correctly.
Alternatives de remplacement direct pour AS4C512M16D4A-62BCNTR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec AS4C512M16D4A-62BCNTR (même facteur de forme et même empreinte) — différant par Data Rate, Package, Operating Temperature Range, Interface, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
AS4C512M16D4A-62BCN
✅ Remplacement direct✓ En stock
$7.2 / unité
Voir la fiche technique →AS4C512M16D4A-62BIN
✅ Remplacement direct✓ En stock
$8.1 / unité
Voir la fiche technique →AS4C512M16D4B-62BCNTR
✅ Remplacement direct✓ En stock
$8.1 / unité
Voir la fiche technique →MT40A512M16TB-062E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WC-BCWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$38 / unité
Voir la fiche technique →NT5AD512M16C4-JRI
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$75.58 / unité
Voir la fiche technique →AS4C512M16D4A-62BCNTR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Taille de mémoire | 8 Gbit (512M x 16) |
| Tension d'alimentation | 1.14V ~ 1.26V (nominal 1.2V) |
| Clock Rate | 1600 MHz (DDR4-3200) |
| Latence CAS | 18 ns |
| Boîtier | 96-FBGA (7.5x13 mm) |
| Température de fonctionnement | 0°C to +95°C (Commercial) |
| Interface | POD (Pseudo Open Drain) |
| Débit de données | 3200 MT/s |
| Refresh | Auto-refresh and self-refresh |
| RoHS | Compliant |
| Moisture Sensitivity Level | 3 (168 Hours) |
| Write Cycle Time - Word, Page | 15 ns |
| Type de montage | Surface Mount |
| Standard Pack | 1500/reel (Tape & Reel) |
Configuration des broches de AS4C512M16D4A-62BCNTR
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply (1.2V) |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VDDQ — DQ power supply (1.2V) |
| Broche B2 | VSSQ — DQ ground |
| Broche B3 | DM0 — Data mask 0 |
| Broche B4 | DQS0_t — Data strobe 0 (true) |
| Broche B5 | DQS0_c — Data strobe 0 (complement) |
| Broche B6 | VSSQ — DQ ground |
| Broche B7 | VDDQ — DQ power supply (1.2V) |
| Broche B8 | DM1 — Data mask 1 |
| Broche B9 | DQS1_t — Data strobe 1 (true) |
| Broche B10 | DQS1_c — Data strobe 1 (complement) |
| Broche B11 | VSSQ — DQ ground |
| Broche B12 | VDDQ — DQ power supply (1.2V) |
| Broche C1 | A0 — Address input 0 |
| Broche C2 | A1 — Address input 1 |
| Broche C3 | A2 — Address input 2 |
| Broche C4 | A3 — Address input 3 |
| Broche C5 | A4 — Address input 4 |
| Broche C6 | A5 — Address input 5 |
| Broche C7 | A6 — Address input 6 |
| Broche C8 | A7 — Address input 7 |
| Broche C9 | A8 — Address input 8 |
| Broche C10 | A9 — Address input 9 |
| Broche C11 | A10/AP — Address input 10 / Auto-precharge |
| Broche C12 | A11 — Address input 11 |
| Broche D1 | A12 — Address input 12 |
| Broche D2 | A13 — Address input 13 |
| Broche D3 | A14 — Address input 14 |
| Broche D4 | A15 — Address input 15 |
| Broche D5 | BA0 — Bank address 0 |
| Broche D6 | BA1 — Bank address 1 |
| Broche D7 | BG0 — Bank group 0 |
| Broche D8 | BG1 — Bank group 1 |
| Broche D9 | CKE — Clock enable |
| Broche D10 | CS_n — Chip select (active low) |
| Broche D11 | ODT — On-die termination |
| Broche D12 | RAS_n — Row address strobe (active low) |
| Broche E1 | CAS_n — Column address strobe (active low) |
| Broche E2 | WE_n — Write enable (active low) |
| Broche E3 | ACT_n — Activate (active low) |
| Broche E4 | PAR — Parity input |
| Broche E5 | ALERT_n — Alert output (active low) |
| Broche E6 | RESET_n — Reset (active low) |
| Broche E7 | VDD — Power supply (1.2V) |
| Broche E8 | VSS — Ground |
| Broche E9 | VPP — Wordline boost supply (2.5V) |
| Broche E10 | VDD — Power supply (1.2V) |
| Broche E11 | VSS — Ground |
| Broche E12 | VDDQ — DQ power supply (1.2V) |
| Broche F1 | VSSQ — DQ ground |
| Broche F2 | DQ8 — Data input/output 8 |
| Broche F3 | DQ9 — Data input/output 9 |
| Broche F4 | VDDQ — DQ power supply (1.2V) |
| Broche F5 | DQ10 — Data input/output 10 |
| Broche F6 | DQ11 — Data input/output 11 |
| Broche F7 | VSSQ — DQ ground |
| Broche F8 | DQ12 — Data input/output 12 |
| Broche F9 | DQ13 — Data input/output 13 |
| Broche F10 | VDDQ — DQ power supply (1.2V) |
| Broche F11 | DQ14 — Data input/output 14 |
| Broche F12 | DQ15 — Data input/output 15 |
| Broche G1 | VSS — Ground |
| Broche G2 | VDD — Power supply (1.2V) |
| Broche G3 | VSS — Ground |
| Broche G4 | VDD — Power supply (1.2V) |
| Broche G5 | VSS — Ground |
| Broche G6 | VDD — Power supply (1.2V) |
| Broche G7 | VSS — Ground |
| Broche G8 | VDD — Power supply (1.2V) |
| Broche G9 | VSS — Ground |
| Broche G10 | VDD — Power supply (1.2V) |
| Broche G11 | VSS — Ground |
| Broche G12 | VDD — Power supply (1.2V) |
| Broche H1 | NC — No connect |
| Broche H2 | NC — No connect |
| Broche H3 | NC — No connect |
| Broche H4 | NC — No connect |
| Broche H5 | NC — No connect |
| Broche H6 | NC — No connect |
| Broche H7 | NC — No connect |
| Broche H8 | NC — No connect |
| Broche H9 | NC — No connect |
| Broche H10 | NC — No connect |
| Broche H11 | NC — No connect |
| Broche H12 | NC — No connect |
Applications typiques
AS4C512M16D4A-62BCNTR convient pour 6 applications: Networking Equipment, Industrial Computing, Data Center Servers, Consumer Electronics, Automotive Infotainment, Telecommunications.
Networking Equipment
The AS4C512M16D4A-62BCNTR provides high-density, high-bandwidth memory for routers, switches, and network appliances. Its 8Gb capacity and 3200 MT/s data rate support packet buffering, routing tables, and flow processing. The 1.2V operation reduces power consumption in always-on network infrastructure. With a 96-ball FBGA package, it fits compact line cards. The commercial temperature range is suitable for indoor networking equipment. Its JEDEC compliance ensures compatibility with standard DDR4 controllers used in network processors.
Recommandé
Industrial Computing
In industrial PCs and embedded systems, the AS4C512M16D4A-62BCNTR offers reliable, high-speed memory for data acquisition, control, and HMI applications. Its 8Gb density supports large application footprints and data logging. The 1.2V supply reduces heat generation, important in sealed enclosures. The 96-ball FBGA package is robust for vibration-prone environments. The commercial temperature range (0°C to +95°C) is adequate for most factory floors. JEDEC compliance ensures easy integration with standard industrial motherboards.
Recommandé
Data Center Servers
The AS4C512M16D4A-62BCNTR is ideal for server main memory, providing 8Gb capacity per chip to build large-capacity DIMMs. Its 3200 MT/s data rate meets the bandwidth demands of cloud computing and virtualization. The 1.2V operation contributes to energy efficiency in data centers. The 96-ball FBGA package is standard for DDR4 RDIMMs and UDIMMs. The commercial temperature range is suitable for controlled server environments. JEDEC compliance ensures compatibility with server memory controllers.
Recommandé
Consumer Electronics
In high-end consumer devices like gaming consoles, set-top boxes, and smart TVs, the AS4C512M16D4A-62BCNTR provides fast, low-power memory for smooth graphics and multitasking. Its 8Gb capacity supports large media buffers and app data. The 1.2V supply extends battery life in portable devices. The 96-ball FBGA package is compact for slim designs. The commercial temperature range covers typical consumer use. JEDEC compliance ensures compatibility with consumer SoCs.
Recommandé
Automotive Infotainment
Although the commercial temperature grade limits extreme automotive use, the AS4C512M16D4A-62BCNTR can be used in infotainment systems operating in controlled cabin environments. Its 8Gb capacity supports navigation maps, media playback, and instrument cluster graphics. The 1.2V operation reduces heat in the dashboard. The 96-ball FBGA package withstands vibration. For under-hood applications, consider the industrial grade AS4C512M16D4A-62BIN. JEDEC compliance ensures compatibility with automotive SoCs.
Recommandé
Telecommunications
In telecom base stations and switches, the AS4C512M16D4A-62BCNTR provides high-bandwidth memory for signal processing and protocol handling. Its 8Gb density supports large buffers for voice and data traffic. The 1.2V supply reduces power in remote radio units. The 96-ball FBGA package is suitable for compact line cards. The commercial temperature range is acceptable for indoor telecom equipment. JEDEC compliance ensures compatibility with telecom processors.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour AS4C512M16D4A-62BCNTR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | AS4C512M16D4A-62BCN | AS4C512M16D4A-62BIN | AS4C512M16D4B-62BCNTR | MT40A512M16TB-062E | K4A8G165WC-BCWE | NT5AD512M16C4-JRI |
|---|---|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) | 96-FBGA (7.5x13) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology | Samsung Electronics | NXP Semiconductors |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) | 1.2V (1.14-1.26V) |
| Clock Rate | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz | 1600 MHz |
Principaux différenciateurs
- Commercial temperature grade with 0°C to +95°C range (vs AS4C512M16D4A-62BIN)
- CAS latency of 18ns (vs AS4C512M16D4B-62BCNTR)
- Tape and reel packaging for automated assembly (vs AS4C512M16D4A-62BCN)
Notes de conception
The AS4C512M16D4A-62BCNTR requires a 1.2V VDD supply and a separate 2.5V VPP supply for wordline boost. Ensure these supplies are clean and well-regulated. Use 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry point. The VPP supply should be capable of sourcing transient current during write operations.
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ, DQS, and address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Use ground planes beneath the FBGA package to minimize noise. Follow the layout guidelines in the Alliance Memory datasheet for optimal signal integrity.
The AS4C512M16D4A-62BCNTR has a maximum operating temperature of +95°C. In high-ambient environments, ensure adequate airflow or heatsinking. The 96-ball FBGA package has a thermal resistance of approximately 20°C/W (theta_JA) with proper PCB copper. Monitor junction temperature to avoid exceeding the absolute maximum rating of +95°C.
Informations de conformité
RoHS compliant per distributor listings. Not AEC-Q100 qualified. Lead-free per datasheet.
