K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
Teilenummer: K4B4G1646D-BCH90 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $10.32 | $10,32 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8.1 | $4.050,00 |
| 1.000 | $7.5 | $7.500,00 |
K4B4G1646D-BCH90 Übersicht
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
Drop-in-Alternativen für K4B4G1646D-BCH90 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K4B4G1646D-BCH90 (gleiche Bauform und Footprint) – abweichend in Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K4B4G1646D-BHMA
✅ Drop-In✓ Auf Lager
$2.9 / Stück
Datenblatt ansehen →K4B4G1646D-BYK0
✅ Drop-In✓ Auf Lager
$2.9 / Stück
Datenblatt ansehen →K4B4G1646D-BCMA
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4B4G1646D-BFMA
✅ Drop-In✓ Auf Lager
$6.5 / Stück
Datenblatt ansehen →K4B4G1646E-BMMA
✅ Drop-In✓ Auf Lager
$16.0781 / Stück
Datenblatt ansehen →MT41K256M16HA-125
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$6.3636 / Stück
Datenblatt ansehen →H5TC4G63AFR
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
K4B4G1646D-BCH90 Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Density | 4Gb |
| Speicherorganisation | 32M x 16 |
| Number of Banks | 8 |
| Datenrate | 2133 Mb/s per pin |
| Versorgungsspannung | 1.35V (1.283V to 1.45V) |
| Gehäuse | 96-ball FBGA |
| Betriebstemperatur | 0°C to +85°C |
| CAS-Latenz | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| Halogenfrei | Yes |
K4B4G1646D-BCH90 Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDD — Power supply |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
| Pin C1 | VDDQ — I/O power supply |
| Pin C2 | VSSQ — I/O ground |
| Pin C3 | VDDQ — I/O power supply |
| Pin C4 | VSSQ — I/O ground |
| Pin C5 | VDDQ — I/O power supply |
| Pin C6 | VSSQ — I/O ground |
| Pin C7 | VDDQ — I/O power supply |
| Pin C8 | VSSQ — I/O ground |
| Pin C9 | VDDQ — I/O power supply |
| Pin C10 | VSSQ — I/O ground |
| Pin C11 | VDDQ — I/O power supply |
| Pin C12 | VSSQ — I/O ground |
| Pin D1 | A0 — Address input 0 |
| Pin D2 | A1 — Address input 1 |
| Pin D3 | A2 — Address input 2 |
| Pin D4 | A3 — Address input 3 |
| Pin D5 | A4 — Address input 4 |
| Pin D6 | A5 — Address input 5 |
| Pin D7 | A6 — Address input 6 |
| Pin D8 | A7 — Address input 7 |
| Pin D9 | A8 — Address input 8 |
| Pin D10 | A9 — Address input 9 |
| Pin D11 | A10/AP — Address input 10 / auto precharge |
| Pin D12 | A11 — Address input 11 |
| Pin E1 | A12 — Address input 12 |
| Pin E2 | A13 — Address input 13 |
| Pin E3 | A14 — Address input 14 |
| Pin E4 | BA0 — Bank address 0 |
| Pin E5 | BA1 — Bank address 1 |
| Pin E6 | BA2 — Bank address 2 |
| Pin E7 | RAS# — Row address strobe |
| Pin E8 | CAS# — Column address strobe |
| Pin E9 | WE# — Write enable |
| Pin E10 | CS# — Chip select |
| Pin E11 | CKE — Clock enable |
| Pin E12 | ODT — On-die termination |
| Pin F1 | CK — Clock |
| Pin F2 | CK# — Complementary clock |
| Pin F3 | VDD — Power supply |
| Pin F4 | VSS — Ground |
| Pin F5 | VDD — Power supply |
| Pin F6 | VSS — Ground |
| Pin F7 | VDD — Power supply |
| Pin F8 | VSS — Ground |
| Pin F9 | VDD — Power supply |
| Pin F10 | VSS — Ground |
| Pin F11 | VDD — Power supply |
| Pin F12 | VSS — Ground |
| Pin G1 | DM0 — Data mask 0 |
| Pin G2 | DM1 — Data mask 1 |
| Pin G3 | VSS — Ground |
| Pin G4 | VDD — Power supply |
| Pin G5 | VSS — Ground |
| Pin G6 | VDD — Power supply |
| Pin G7 | VSS — Ground |
| Pin G8 | VDD — Power supply |
| Pin G9 | VSS — Ground |
| Pin G10 | VDD — Power supply |
| Pin G11 | VSS — Ground |
| Pin G12 | VDD — Power supply |
| Pin H1 | ZQ — Calibration reference |
| Pin H2 | VSS — Ground |
| Pin H3 | VDD — Power supply |
| Pin H4 | VSS — Ground |
| Pin H5 | VDD — Power supply |
| Pin H6 | VSS — Ground |
| Pin H7 | VDD — Power supply |
| Pin H8 | VSS — Ground |
| Pin H9 | VDD — Power supply |
| Pin H10 | VSS — Ground |
| Pin H11 | VDD — Power supply |
| Pin H12 | VSS — Ground |
| Pin J1 | NC — No connect |
| Pin J2 | NC — No connect |
| Pin J3 | NC — No connect |
| Pin J4 | NC — No connect |
| Pin J5 | NC — No connect |
| Pin J6 | NC — No connect |
| Pin J7 | NC — No connect |
| Pin J8 | NC — No connect |
| Pin J9 | NC — No connect |
| Pin J10 | NC — No connect |
| Pin J11 | NC — No connect |
| Pin J12 | NC — No connect |
Typische Anwendungen
K4B4G1646D-BCH90 ist geeignet für 6 Anwendungs: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
Empfohlen
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
Empfohlen
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
Empfohlen
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
Empfohlen
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
Empfohlen
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K4B4G1646D-BCH90 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Low voltage operation at 1.35V (vs. MT41K256M16HA-125)
- High data rate of 2133Mb/s (vs. MT41K256M16HA-125)
- D-die process technology (vs. K4B4G1646E-BMMA)
Designhinweise
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
Compliance-Informationen
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
