K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
Référence : K4B4G1646D-BCH90 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $10.32 | $10,32 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8.1 | $4 050,00 |
| 1 000 | $7.5 | $7 500,00 |
K4B4G1646D-BCH90 Présentation
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
Alternatives de remplacement direct pour K4B4G1646D-BCH90 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K4B4G1646D-BCH90 (même facteur de forme et même empreinte) — différant par Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K4B4G1646D-BHMA
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646D-BYK0
✅ Remplacement direct✓ En stock
$2.9 / unité
Voir la fiche technique →K4B4G1646D-BCMA
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
K4B4G1646D-BFMA
✅ Remplacement direct✓ En stock
$6.5 / unité
Voir la fiche technique →K4B4G1646E-BMMA
✅ Remplacement direct✓ En stock
$16.0781 / unité
Voir la fiche technique →MT41K256M16HA-125
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.3636 / unité
Voir la fiche technique →H5TC4G63AFR
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
K4B4G1646D-BCH90 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3L SDRAM |
| Density | 4Gb |
| Organisation de la mémoire | 32M x 16 |
| Number of Banks | 8 |
| Débit de données | 2133 Mb/s per pin |
| Tension d'alimentation | 1.35V (1.283V to 1.45V) |
| Boîtier | 96-ball FBGA |
| Température de fonctionnement | 0°C to +85°C |
| Latence CAS | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| Sans halogène | Yes |
Configuration des broches de K4B4G1646D-BCH90
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDD — Power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ8 — Data input/output 8 |
| Broche B3 | DQ9 — Data input/output 9 |
| Broche B4 | VDD — Power supply |
| Broche B5 | DQ10 — Data input/output 10 |
| Broche B6 | DQ11 — Data input/output 11 |
| Broche B7 | VSS — Ground |
| Broche B8 | DQ12 — Data input/output 12 |
| Broche B9 | DQ13 — Data input/output 13 |
| Broche B10 | VDD — Power supply |
| Broche B11 | DQ14 — Data input/output 14 |
| Broche B12 | DQ15 — Data input/output 15 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | VSSQ — I/O ground |
| Broche C3 | VDDQ — I/O power supply |
| Broche C4 | VSSQ — I/O ground |
| Broche C5 | VDDQ — I/O power supply |
| Broche C6 | VSSQ — I/O ground |
| Broche C7 | VDDQ — I/O power supply |
| Broche C8 | VSSQ — I/O ground |
| Broche C9 | VDDQ — I/O power supply |
| Broche C10 | VSSQ — I/O ground |
| Broche C11 | VDDQ — I/O power supply |
| Broche C12 | VSSQ — I/O ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / auto precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12 — Address input 12 |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | BA0 — Bank address 0 |
| Broche E5 | BA1 — Bank address 1 |
| Broche E6 | BA2 — Bank address 2 |
| Broche E7 | RAS# — Row address strobe |
| Broche E8 | CAS# — Column address strobe |
| Broche E9 | WE# — Write enable |
| Broche E10 | CS# — Chip select |
| Broche E11 | CKE — Clock enable |
| Broche E12 | ODT — On-die termination |
| Broche F1 | CK — Clock |
| Broche F2 | CK# — Complementary clock |
| Broche F3 | VDD — Power supply |
| Broche F4 | VSS — Ground |
| Broche F5 | VDD — Power supply |
| Broche F6 | VSS — Ground |
| Broche F7 | VDD — Power supply |
| Broche F8 | VSS — Ground |
| Broche F9 | VDD — Power supply |
| Broche F10 | VSS — Ground |
| Broche F11 | VDD — Power supply |
| Broche F12 | VSS — Ground |
| Broche G1 | DM0 — Data mask 0 |
| Broche G2 | DM1 — Data mask 1 |
| Broche G3 | VSS — Ground |
| Broche G4 | VDD — Power supply |
| Broche G5 | VSS — Ground |
| Broche G6 | VDD — Power supply |
| Broche G7 | VSS — Ground |
| Broche G8 | VDD — Power supply |
| Broche G9 | VSS — Ground |
| Broche G10 | VDD — Power supply |
| Broche G11 | VSS — Ground |
| Broche G12 | VDD — Power supply |
| Broche H1 | ZQ — Calibration reference |
| Broche H2 | VSS — Ground |
| Broche H3 | VDD — Power supply |
| Broche H4 | VSS — Ground |
| Broche H5 | VDD — Power supply |
| Broche H6 | VSS — Ground |
| Broche H7 | VDD — Power supply |
| Broche H8 | VSS — Ground |
| Broche H9 | VDD — Power supply |
| Broche H10 | VSS — Ground |
| Broche H11 | VDD — Power supply |
| Broche H12 | VSS — Ground |
| Broche J1 | NC — No connect |
| Broche J2 | NC — No connect |
| Broche J3 | NC — No connect |
| Broche J4 | NC — No connect |
| Broche J5 | NC — No connect |
| Broche J6 | NC — No connect |
| Broche J7 | NC — No connect |
| Broche J8 | NC — No connect |
| Broche J9 | NC — No connect |
| Broche J10 | NC — No connect |
| Broche J11 | NC — No connect |
| Broche J12 | NC — No connect |
Applications typiques
K4B4G1646D-BCH90 convient pour 6 applications: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
Recommandé
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
Recommandé
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
Recommandé
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
Recommandé
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
Recommandé
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K4B4G1646D-BCH90 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Principaux différenciateurs
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- High data rate of 2133Mb/s (vs MT41K256M16HA-125)
- D-die process technology (vs K4B4G1646E-BMMA)
Notes de conception
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
Informations de conformité
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
