K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
N.º da peça: K4B4G1646D-BCH90 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $10.32 | $10,32 |
| 10 | $9.5 | $95,00 |
| 100 | $8.75 | $875,00 |
| 500 | $8.1 | $4.050,00 |
| 1.000 | $7.5 | $7.500,00 |
K4B4G1646D-BCH90 Visão geral
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
Alternativas drop-in para K4B4G1646D-BCH90 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4B4G1646D-BCH90 (mesmo formato e footprint) — diferindo em Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4B4G1646D-BHMA
✅ Drop-In✓ Em estoque
$2.9 / unidade
Ver ficha técnica →K4B4G1646D-BYK0
✅ Drop-In✓ Em estoque
$2.9 / unidade
Ver ficha técnica →K4B4G1646D-BCMA
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4B4G1646D-BFMA
✅ Drop-In✓ Em estoque
$6.5 / unidade
Ver ficha técnica →K4B4G1646E-BMMA
✅ Drop-In✓ Em estoque
$16.0781 / unidade
Ver ficha técnica →MT41K256M16HA-125
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.3636 / unidade
Ver ficha técnica →H5TC4G63AFR
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
K4B4G1646D-BCH90 Classificações máximas e características elétricas
| Tipo de memória | DDR3L SDRAM |
| Density | 4Gb |
| Organização da memória | 32M x 16 |
| Number of Banks | 8 |
| Taxa de dados | 2133 Mb/s per pin |
| Tensão de alimentação | 1.35V (1.283V to 1.45V) |
| Encapsulamento | 96-ball FBGA |
| Temperatura de operação | 0°C to +85°C |
| Latência CAS | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| Livre de halogênio | Yes |
Configuração de pinos do K4B4G1646D-BCH90
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDD — Power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQ8 — Data input/output 8 |
| Pino B3 | DQ9 — Data input/output 9 |
| Pino B4 | VDD — Power supply |
| Pino B5 | DQ10 — Data input/output 10 |
| Pino B6 | DQ11 — Data input/output 11 |
| Pino B7 | VSS — Ground |
| Pino B8 | DQ12 — Data input/output 12 |
| Pino B9 | DQ13 — Data input/output 13 |
| Pino B10 | VDD — Power supply |
| Pino B11 | DQ14 — Data input/output 14 |
| Pino B12 | DQ15 — Data input/output 15 |
| Pino C1 | VDDQ — I/O power supply |
| Pino C2 | VSSQ — I/O ground |
| Pino C3 | VDDQ — I/O power supply |
| Pino C4 | VSSQ — I/O ground |
| Pino C5 | VDDQ — I/O power supply |
| Pino C6 | VSSQ — I/O ground |
| Pino C7 | VDDQ — I/O power supply |
| Pino C8 | VSSQ — I/O ground |
| Pino C9 | VDDQ — I/O power supply |
| Pino C10 | VSSQ — I/O ground |
| Pino C11 | VDDQ — I/O power supply |
| Pino C12 | VSSQ — I/O ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / auto precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12 — Address input 12 |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | BA0 — Bank address 0 |
| Pino E5 | BA1 — Bank address 1 |
| Pino E6 | BA2 — Bank address 2 |
| Pino E7 | RAS# — Row address strobe |
| Pino E8 | CAS# — Column address strobe |
| Pino E9 | WE# — Write enable |
| Pino E10 | CS# — Chip select |
| Pino E11 | CKE — Clock enable |
| Pino E12 | ODT — On-die termination |
| Pino F1 | CK — Clock |
| Pino F2 | CK# — Complementary clock |
| Pino F3 | VDD — Power supply |
| Pino F4 | VSS — Ground |
| Pino F5 | VDD — Power supply |
| Pino F6 | VSS — Ground |
| Pino F7 | VDD — Power supply |
| Pino F8 | VSS — Ground |
| Pino F9 | VDD — Power supply |
| Pino F10 | VSS — Ground |
| Pino F11 | VDD — Power supply |
| Pino F12 | VSS — Ground |
| Pino G1 | DM0 — Data mask 0 |
| Pino G2 | DM1 — Data mask 1 |
| Pino G3 | VSS — Ground |
| Pino G4 | VDD — Power supply |
| Pino G5 | VSS — Ground |
| Pino G6 | VDD — Power supply |
| Pino G7 | VSS — Ground |
| Pino G8 | VDD — Power supply |
| Pino G9 | VSS — Ground |
| Pino G10 | VDD — Power supply |
| Pino G11 | VSS — Ground |
| Pino G12 | VDD — Power supply |
| Pino H1 | ZQ — Calibration reference |
| Pino H2 | VSS — Ground |
| Pino H3 | VDD — Power supply |
| Pino H4 | VSS — Ground |
| Pino H5 | VDD — Power supply |
| Pino H6 | VSS — Ground |
| Pino H7 | VDD — Power supply |
| Pino H8 | VSS — Ground |
| Pino H9 | VDD — Power supply |
| Pino H10 | VSS — Ground |
| Pino H11 | VDD — Power supply |
| Pino H12 | VSS — Ground |
| Pino J1 | NC — No connect |
| Pino J2 | NC — No connect |
| Pino J3 | NC — No connect |
| Pino J4 | NC — No connect |
| Pino J5 | NC — No connect |
| Pino J6 | NC — No connect |
| Pino J7 | NC — No connect |
| Pino J8 | NC — No connect |
| Pino J9 | NC — No connect |
| Pino J10 | NC — No connect |
| Pino J11 | NC — No connect |
| Pino J12 | NC — No connect |
Aplicações típicas
K4B4G1646D-BCH90 é adequado para 6 aplicaçãos: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
Recomendado
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
Recomendado
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
Recomendado
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
Recomendado
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
Recomendado
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4B4G1646D-BCH90 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- High data rate of 2133Mb/s (vs MT41K256M16HA-125)
- D-die process technology (vs K4B4G1646E-BMMA)
Notas de projeto
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
Informações de conformidade
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
