K4B4G1646D-BCH90 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
부품 번호: K4B4G1646D-BCH90 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $10.32 | $10.32 |
| 10 | $9.5 | $95.00 |
| 100 | $8.75 | $875.00 |
| 500 | $8.1 | $4,050.00 |
| 1,000 | $7.5 | $7,500.00 |
K4B4G1646D-BCH90 개요
DDR3L (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 SDRAM family, which uses double data rate architecture to transfer data on both edges of the clock, and is widely used in computing, networking, and embedded systems.
Key features include programmable CAS latency, write latency, on-die termination (ODT), and internal calibration (ZQ calibration) for signal integrity. The device supports auto precharge, asynchronous reset, and data mask functions. It is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C.
The K4B4G1646D-BCH90 uses a D-die process, offering improved performance and power efficiency. The 96-ball FBGA package provides a compact footprint with excellent thermal and electrical characteristics. The device supports burst lengths of 8 and 4, and features programmable CAS latency from 9 to 14 clocks.
Typical applications include mobile devices, consumer electronics, networking equipment, and embedded systems where low power and high density are critical. The 1.35V operation makes it ideal for battery-powered devices, while the high-speed interface supports bandwidth-intensive tasks.
When designing with this device, ensure proper decoupling and signal integrity practices, including controlled impedance traces and termination. The ZQ calibration pin requires a 240-ohm resistor to ground for accurate on-die termination calibration.
드롭인 대체품: K4B4G1646D-BCH90 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4B4G1646D-BCH90 (동일 폼 팩터 및 풋프린트) — 차이점: Supply Voltage, CAS Latency, Package, Burst Length, Data Rate.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4B4G1646D-BHMA
✅ 드롭인✓ 재고 있음
$2.9 / 개
데이터시트 보기 →K4B4G1646D-BYK0
✅ 드롭인✓ 재고 있음
$2.9 / 개
데이터시트 보기 →K4B4G1646D-BCMA
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4B4G1646D-BFMA
✅ 드롭인✓ 재고 있음
$6.5 / 개
데이터시트 보기 →K4B4G1646E-BMMA
✅ 드롭인✓ 재고 있음
$16.0781 / 개
데이터시트 보기 →MT41K256M16HA-125
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.3636 / 개
데이터시트 보기 →H5TC4G63AFR
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
K4B4G1646D-BCH90 최대 정격 & 전기적 특성
| 메모리 유형 | DDR3L SDRAM |
| Density | 4Gb |
| 메모리 구성 | 32M x 16 |
| Number of Banks | 8 |
| 데이터 속도 | 2133 Mb/s per pin |
| 공급 전압 | 1.35V (1.283V to 1.45V) |
| 패키지 | 96-ball FBGA |
| 동작 온도 | 0°C to +85°C |
| CAS 레이턴시 | 9-14 clocks (programmable) |
| Burst Length | 8 and 4 |
| On-Die Termination | Yes (ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS Compliant | Yes |
| Lead-Free | Yes |
| 할로겐 프리 | Yes |
K4B4G1646D-BCH90 핀 구성
| 핀 A1 | VDD — Power supply |
| 핀 A2 | DQ0 — Data input/output 0 |
| 핀 A3 | DQ1 — Data input/output 1 |
| 핀 A4 | VSS — Ground |
| 핀 A5 | DQ2 — Data input/output 2 |
| 핀 A6 | DQ3 — Data input/output 3 |
| 핀 A7 | VDD — Power supply |
| 핀 A8 | DQ4 — Data input/output 4 |
| 핀 A9 | DQ5 — Data input/output 5 |
| 핀 A10 | VSS — Ground |
| 핀 A11 | DQ6 — Data input/output 6 |
| 핀 A12 | DQ7 — Data input/output 7 |
| 핀 B1 | VSS — Ground |
| 핀 B2 | DQ8 — Data input/output 8 |
| 핀 B3 | DQ9 — Data input/output 9 |
| 핀 B4 | VDD — Power supply |
| 핀 B5 | DQ10 — Data input/output 10 |
| 핀 B6 | DQ11 — Data input/output 11 |
| 핀 B7 | VSS — Ground |
| 핀 B8 | DQ12 — Data input/output 12 |
| 핀 B9 | DQ13 — Data input/output 13 |
| 핀 B10 | VDD — Power supply |
| 핀 B11 | DQ14 — Data input/output 14 |
| 핀 B12 | DQ15 — Data input/output 15 |
| 핀 C1 | VDDQ — I/O power supply |
| 핀 C2 | VSSQ — I/O ground |
| 핀 C3 | VDDQ — I/O power supply |
| 핀 C4 | VSSQ — I/O ground |
| 핀 C5 | VDDQ — I/O power supply |
| 핀 C6 | VSSQ — I/O ground |
| 핀 C7 | VDDQ — I/O power supply |
| 핀 C8 | VSSQ — I/O ground |
| 핀 C9 | VDDQ — I/O power supply |
| 핀 C10 | VSSQ — I/O ground |
| 핀 C11 | VDDQ — I/O power supply |
| 핀 C12 | VSSQ — I/O ground |
| 핀 D1 | A0 — Address input 0 |
| 핀 D2 | A1 — Address input 1 |
| 핀 D3 | A2 — Address input 2 |
| 핀 D4 | A3 — Address input 3 |
| 핀 D5 | A4 — Address input 4 |
| 핀 D6 | A5 — Address input 5 |
| 핀 D7 | A6 — Address input 6 |
| 핀 D8 | A7 — Address input 7 |
| 핀 D9 | A8 — Address input 8 |
| 핀 D10 | A9 — Address input 9 |
| 핀 D11 | A10/AP — Address input 10 / auto precharge |
| 핀 D12 | A11 — Address input 11 |
| 핀 E1 | A12 — Address input 12 |
| 핀 E2 | A13 — Address input 13 |
| 핀 E3 | A14 — Address input 14 |
| 핀 E4 | BA0 — Bank address 0 |
| 핀 E5 | BA1 — Bank address 1 |
| 핀 E6 | BA2 — Bank address 2 |
| 핀 E7 | RAS# — Row address strobe |
| 핀 E8 | CAS# — Column address strobe |
| 핀 E9 | WE# — Write enable |
| 핀 E10 | CS# — Chip select |
| 핀 E11 | CKE — Clock enable |
| 핀 E12 | ODT — On-die termination |
| 핀 F1 | CK — Clock |
| 핀 F2 | CK# — Complementary clock |
| 핀 F3 | VDD — Power supply |
| 핀 F4 | VSS — Ground |
| 핀 F5 | VDD — Power supply |
| 핀 F6 | VSS — Ground |
| 핀 F7 | VDD — Power supply |
| 핀 F8 | VSS — Ground |
| 핀 F9 | VDD — Power supply |
| 핀 F10 | VSS — Ground |
| 핀 F11 | VDD — Power supply |
| 핀 F12 | VSS — Ground |
| 핀 G1 | DM0 — Data mask 0 |
| 핀 G2 | DM1 — Data mask 1 |
| 핀 G3 | VSS — Ground |
| 핀 G4 | VDD — Power supply |
| 핀 G5 | VSS — Ground |
| 핀 G6 | VDD — Power supply |
| 핀 G7 | VSS — Ground |
| 핀 G8 | VDD — Power supply |
| 핀 G9 | VSS — Ground |
| 핀 G10 | VDD — Power supply |
| 핀 G11 | VSS — Ground |
| 핀 G12 | VDD — Power supply |
| 핀 H1 | ZQ — Calibration reference |
| 핀 H2 | VSS — Ground |
| 핀 H3 | VDD — Power supply |
| 핀 H4 | VSS — Ground |
| 핀 H5 | VDD — Power supply |
| 핀 H6 | VSS — Ground |
| 핀 H7 | VDD — Power supply |
| 핀 H8 | VSS — Ground |
| 핀 H9 | VDD — Power supply |
| 핀 H10 | VSS — Ground |
| 핀 H11 | VDD — Power supply |
| 핀 H12 | VSS — Ground |
| 핀 J1 | NC — No connect |
| 핀 J2 | NC — No connect |
| 핀 J3 | NC — No connect |
| 핀 J4 | NC — No connect |
| 핀 J5 | NC — No connect |
| 핀 J6 | NC — No connect |
| 핀 J7 | NC — No connect |
| 핀 J8 | NC — No connect |
| 핀 J9 | NC — No connect |
| 핀 J10 | NC — No connect |
| 핀 J11 | NC — No connect |
| 핀 J12 | NC — No connect |
일반적인 애플리케이션
K4B4G1646D-BCH90 적합 용도: 6 애플리케이션s: Mobile Devices, Consumer Electronics, Networking Equipment, Embedded Systems, Computing Systems, Automotive Infotainment.
Mobile Devices
The K4B4G1646D-BCH90's low 1.35V operation and 4Gb density make it ideal for smartphones and tablets where power efficiency and compact size are critical. Its 2133Mb/s data rate supports high-bandwidth applications like HD video and gaming. The 96-ball FBGA package fits tight PCB layouts, and the commercial temperature range covers typical mobile use cases.
추천
Consumer Electronics
In consumer devices like smart TVs, set-top boxes, and gaming consoles, the K4B4G1646D-BCH90 provides the memory bandwidth needed for smooth multimedia playback and responsive user interfaces. Its 4Gb density supports multiple applications simultaneously, while the low voltage reduces overall system power. The FBGA package enables slim product designs.
추천
Networking Equipment
Routers, switches, and network appliances require high-speed memory for packet buffering and routing tables. The K4B4G1646D-BCH90's 2133Mb/s data rate and 4Gb density provide ample bandwidth and capacity. Its low power consumption is beneficial in always-on networking gear, and the commercial temperature range suits indoor environments.
추천
Embedded Systems
For industrial and embedded applications, the K4B4G1646D-BCH90 offers reliable DDR3L memory with a wide operating temperature range (0°C to +85°C). Its 4Gb density supports complex firmware and data logging. The 96-ball FBGA package is robust for harsh environments, and the low voltage reduces heat generation.
추천
Computing Systems
In laptops, mini-PCs, and servers, the K4B4G1646D-BCH90 provides high-density, low-power memory for multitasking and data-intensive workloads. Its 2133Mb/s speed ensures fast data access, while the 1.35V operation extends battery life in portable devices. The FBGA package is standard for SODIMM and board-down designs.
추천
Automotive Infotainment
Although the K4B4G1646D-BCH90 has a commercial temperature range, it can be used in automotive infotainment systems with proper thermal management. Its 4Gb density supports navigation, multimedia, and connectivity features. The low power consumption is beneficial for vehicle electrical systems, and the FBGA package withstands vibration.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4B4G1646D-BCH90 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4B4G1646D-BHMA | K4B4G1646D-BYK0 | K4B4G1646E-BMMA | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4Gb | 4Gb | 4Gb | 4Gb | 4Gb |
| Organization | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 | 32M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| Operating Temperature | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +85°C | 0°C to +95°C |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes |
주요 차별점
- Low voltage operation at 1.35V (vs MT41K256M16HA-125)
- High data rate of 2133Mb/s (vs MT41K256M16HA-125)
- D-die process technology (vs K4B4G1646E-BMMA)
설계 노트
For reliable DDR3L operation, maintain controlled impedance of 40-50 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power supply.
Use on-die termination (ODT) settings to match the memory bus impedance. The ZQ pin requires a 240-ohm resistor to ground for calibration. Ensure the reference voltage (VREF) is clean and stable, typically generated by a resistor divider or dedicated regulator. Follow the layout guidelines in the Samsung datasheet for optimal signal integrity.
The K4B4G1646D-BCH90 operates up to +85°C. In high-density designs, ensure adequate airflow or a thermal pad to dissipate heat. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For automotive or industrial environments, consider a wider temperature grade if available.
규정 준수 정보
RoHS compliant, lead-free, and halogen-free per Samsung datasheet. AEC-Q100 not applicable for memory components.
