NT5CC256M16ER-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
Teilenummer: NT5CC256M16ER-EK ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $30.12 | $30,12 |
| 10 | $28.5 | $285,00 |
| 100 | $26.8 | $2.680,00 |
| 500 | $25.2 | $12.600,00 |
| 1.000 | $24 | $24.000,00 |
NT5CC256M16ER-EK Übersicht
DDR3L (Double Data Rate 3 Low Voltage) SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 family, which uses double data rate signaling to transfer data on both edges of the clock, and is widely used in laptops, servers, and industrial applications where energy efficiency is critical.
Key features include a 4Gb density, 16-bit I/O width, 933MHz clock speed, and support for 1.35V operation. The device also features programmable CAS latency, burst lengths of 8 and 4 (with burst chop), and on-die termination (ODT) for improved signal integrity. The TFBGA-96 package offers a compact footprint suitable for space-constrained designs.
Technically, the NT5CC256M16ER-EK uses an 8n-prefetch architecture, achieving high data rates with low power. It includes a mode register for configuration, and supports DLL (Delay-Locked Loop) for precise timing. The device is RoHS compliant and lead-free, meeting environmental standards.
Typical applications include DDR3L memory modules for laptops, embedded systems, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive applications.
When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at high speeds.
Drop-in-Alternativen für NT5CC256M16ER-EK – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit NT5CC256M16ER-EK (gleiche Bauform und Footprint) – abweichend in Supply Voltage, Data Rate, CAS Latency, Package, Density.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NT5CC256M16ER-EKI
✅ Drop-In✓ Auf Lager
$16.7045 / Stück
Datenblatt ansehen →MT41K256M16TW-107:P
✅ Drop-In✓ Auf Lager
$16 / Stück
Datenblatt ansehen →AS4C256M16D3LC-10BCN
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
IS43TR16512B-107MBL
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
K4B4G1646E-HCK0
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
H5TQ2G83AFR-PBC
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
NT5CC256M16ER-EK Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR3L SDRAM |
| Density | 4 Gbit |
| Speicherorganisation | 256M x 16 |
| Versorgungsspannung | 1.35 V |
| Datenrate | 933 MHz (DDR3L-1866) |
| Gehäuse | TFBGA-96 |
| Betriebstemperatur | 0°C to +95°C |
| Burst Length | 8, 4 (with burst chop) |
| Schnittstelle | Parallel |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Write Leveling | Yes |
| Dynamic ODT | Yes |
| ZQ Calibration | Yes |
NT5CC256M16ER-EK Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VDD — Power supply |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VSS — Ground |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VDD — Power supply |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VSS — Ground |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
| Pin C1 | VDD — Power supply |
| Pin C2 | DQS0 — Data strobe 0 |
| Pin C3 | DQS0# — Data strobe 0 complement |
| Pin C4 | VSS — Ground |
| Pin C5 | DQS1 — Data strobe 1 |
| Pin C6 | DQS1# — Data strobe 1 complement |
| Pin C7 | VDD — Power supply |
| Pin C8 | DQS2 — Data strobe 2 |
| Pin C9 | DQS2# — Data strobe 2 complement |
| Pin C10 | VSS — Ground |
| Pin C11 | DQS3 — Data strobe 3 |
| Pin C12 | DQS3# — Data strobe 3 complement |
| Pin D1 | VDD — Power supply |
| Pin D2 | A0 — Address input 0 |
| Pin D3 | A1 — Address input 1 |
| Pin D4 | VSS — Ground |
| Pin D5 | A2 — Address input 2 |
| Pin D6 | A3 — Address input 3 |
| Pin D7 | VDD — Power supply |
| Pin D8 | A4 — Address input 4 |
| Pin D9 | A5 — Address input 5 |
| Pin D10 | VSS — Ground |
| Pin D11 | A6 — Address input 6 |
| Pin D12 | A7 — Address input 7 |
| Pin E1 | VDD — Power supply |
| Pin E2 | A8 — Address input 8 |
| Pin E3 | A9 — Address input 9 |
| Pin E4 | VSS — Ground |
| Pin E5 | A10/AP — Address input 10 / Auto precharge |
| Pin E6 | A11 — Address input 11 |
| Pin E7 | VDD — Power supply |
| Pin E8 | A12 — Address input 12 |
| Pin E9 | A13 — Address input 13 |
| Pin E10 | VSS — Ground |
| Pin E11 | A14 — Address input 14 |
| Pin E12 | A15 — Address input 15 |
| Pin F1 | VDD — Power supply |
| Pin F2 | BA0 — Bank address 0 |
| Pin F3 | BA1 — Bank address 1 |
| Pin F4 | VSS — Ground |
| Pin F5 | BA2 — Bank address 2 |
| Pin F6 | RAS# — Row address strobe |
| Pin F7 | VDD — Power supply |
| Pin F8 | CAS# — Column address strobe |
| Pin F9 | WE# — Write enable |
| Pin F10 | VSS — Ground |
| Pin F11 | CS# — Chip select |
| Pin F12 | CKE — Clock enable |
| Pin G1 | VDD — Power supply |
| Pin G2 | ODT — On-die termination |
| Pin G3 | CK — Clock |
| Pin G4 | VSS — Ground |
| Pin G5 | CK# — Clock complement |
| Pin G6 | RESET# — Reset |
| Pin G7 | VDD — Power supply |
| Pin G8 | DM0 — Data mask 0 |
| Pin G9 | DM1 — Data mask 1 |
| Pin G10 | VSS — Ground |
| Pin G11 | DM2 — Data mask 2 |
| Pin G12 | DM3 — Data mask 3 |
| Pin H1 | VDD — Power supply |
| Pin H2 | VDDQ — DQ power supply |
| Pin H3 | VSSQ — DQ ground |
| Pin H4 | VSS — Ground |
| Pin H5 | VDDQ — DQ power supply |
| Pin H6 | VSSQ — DQ ground |
| Pin H7 | VDD — Power supply |
| Pin H8 | VDDQ — DQ power supply |
| Pin H9 | VSSQ — DQ ground |
| Pin H10 | VSS — Ground |
| Pin H11 | VDDQ — DQ power supply |
| Pin H12 | VSSQ — DQ ground |
Typische Anwendungen
NT5CC256M16ER-EK ist geeignet für 6 Anwendungs: Laptop Memory, Embedded Systems, Networking Equipment, Industrial PCs, Consumer Electronics, Automotive Infotainment.
Laptop Memory
The NT5CC256M16ER-EK is ideal for laptop memory modules due to its 1.35V low-voltage operation, which reduces power consumption and extends battery life. Its 4Gb density and 256Mx16 organization provide sufficient capacity for mainstream laptops. The 933MHz data rate ensures smooth multitasking and responsive performance. When used in SODIMM modules, it must be paired with a compatible memory controller that supports DDR3L. The low voltage also reduces heat generation, improving thermal management in thin and light laptops.
Empfohlen
Embedded Systems
In embedded systems, the NT5CC256M16ER-EK provides high-density volatile storage for applications like industrial controllers, networking equipment, and medical devices. Its wide temperature range (0°C to +95°C) supports industrial environments. The 1.35V operation is compatible with low-power embedded processors. The device's auto self-refresh and write leveling features simplify system design. For reliable operation, ensure proper decoupling and follow the layout guidelines in the datasheet.
Empfohlen
Networking Equipment
The NT5CC256M16ER-EK is suitable for networking equipment such as routers, switches, and firewalls, where high-bandwidth memory is required for packet buffering and routing tables. Its 933MHz data rate provides fast data throughput, and the 4Gb density allows large buffers. The low-voltage operation reduces power consumption in always-on network devices. The TFBGA-96 package is compact, enabling high-density PCB layouts. For optimal performance, use with a DDR3L controller that supports ECC if needed.
Empfohlen
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The NT5CC256M16ER-EK's 0°C to +95°C temperature range covers most industrial settings. Its 1.35V operation reduces power and heat, which is critical in sealed enclosures. The 4Gb density supports demanding industrial applications like machine vision and process control. The device's robust design includes features like auto self-refresh to maintain data integrity. When designing, consider using industrial-grade variants like the -EKI for extended temperature ranges.
Empfohlen
Consumer Electronics
In consumer electronics such as smart TVs, set-top boxes, and gaming consoles, the NT5CC256M16ER-EK provides high-speed memory for multimedia processing. Its 933MHz data rate supports HD video streaming and gaming. The low-voltage operation is ideal for energy-efficient devices. The 4Gb density allows multiple applications to run simultaneously. The TFBGA-96 package is suitable for compact consumer devices. For best performance, pair with a processor that supports DDR3L-1866.
Empfohlen
Automotive Infotainment
The NT5CC256M16ER-EK can be used in automotive infotainment systems, providing memory for navigation, audio, and video playback. Its 1.35V operation reduces power consumption in vehicles. The 0°C to +95°C temperature range is suitable for cabin environments. The 4Gb density supports complex infotainment software. However, for automotive-grade requirements, consider the -EKI variant with industrial temperature range. Ensure compliance with AEC-Q100 if required.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NT5CC256M16ER-EK – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NT5CC256M16ER-EKI | MT41K256M16TW-107:P | AS4C256M16D3LC-10BCN | IS43TR16512B-107MBL | K4B4G1646E-HCK0 | H5TQ2G83AFR-PBC |
|---|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Alliance Memory | ISSI | Samsung Electronics | SK Hynix |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz | 933 MHz |
| Operating Temperature | 0°C to +95°C | -40°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
Wichtigste Unterscheidungsmerkmale
- Low-voltage operation at 1.35V (vs. Standard DDR3 parts at 1.5V)
- Wide temperature range up to +95°C (vs. Some competitors limited to +85°C)
- High density 4Gb in 256Mx16 (vs. Lower density parts like 2Gb)
Designhinweise
For high-speed DDR3L signals, maintain controlled impedance of 40-60 ohms for data lines and 50-60 ohms for address/control lines. Keep trace lengths matched within 100 mils for each byte lane. Use ground planes beneath the memory area to reduce noise and ensure signal integrity.
Decouple the VDD and VDDQ pins with 0.1uF and 1uF ceramic capacitors placed as close as possible to the pins. Use a 10uF bulk capacitor on the power rail. The 1.35V supply must be stable and low-noise; consider a dedicated LDO or DC-DC converter with adequate load transient response.
The NT5CC256M16ER-EK operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, consider the -EKI variant with wider temperature range.
Compliance-Informationen
RoHS compliant per LCSC and JLCPCB listings. Lead-free per product description.
