NT5AD512M16A4-GZ - 8Gb DDR4 SDRAM 512Mx16 | Nanya
Teilenummer: NT5AD512M16A4-GZ ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $12.7 | $12,70 |
| 10 | $11.5 | $115,00 |
| 100 | $10.2 | $1.020,00 |
| 500 | $9.1 | $4.550,00 |
| 1.000 | $8.5 | $8.500,00 |
NT5AD512M16A4-GZ Übersicht
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to DDR3. It is the industry standard for main memory in servers, desktops, and embedded systems, offering higher bandwidth and lower power consumption than its predecessors. DDR4 operates at lower voltages (1.2V) and supports higher densities, enabling larger memory capacities in compact form factors.
Key features of the NT5AD512M16A4-GZ include a maximum clock frequency of 1200 MHz (DDR4-2400), a 16-bit data bus, and support for interleaved burst lengths of 4 and 8. It incorporates advanced functions such as auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, CRC (Cyclic Redundancy Check), data mask, write leveling, and ZQ calibration. These features enhance signal integrity, reliability, and ease of use in high-speed systems.
The device is designed for commercial and industrial temperature ranges, ensuring reliable operation in demanding environments. It is RoHS compliant and lead-free, meeting environmental standards. The 96-ball TFBGA package provides a compact footprint with excellent thermal and electrical performance, suitable for space-constrained PCB designs.
Typical applications include enterprise servers, data centers, networking equipment, industrial automation, and advanced driver assistance systems (ADAS). The high density and bandwidth make it ideal for memory-intensive tasks such as real-time data processing, AI inference, and high-performance computing.
When designing with this DDR4 SDRAM, ensure proper termination and signal integrity practices are followed, including matched trace lengths and appropriate on-die termination (ODT) settings. The ZQ calibration pin must be connected to a 240-ohm resistor to ground for proper impedance calibration. Additionally, the VTT and VREF supplies should be decoupled with capacitors to minimize noise.
Drop-in-Alternativen für NT5AD512M16A4-GZ – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit NT5AD512M16A4-GZ (gleiche Bauform und Footprint) – abweichend in Package, Data Rate, Operating Temperature Range, Supply Voltage, Density.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
NT5AD512M16C4-JRI
✅ Drop-In✓ Auf Lager
$75.58 / Stück
Datenblatt ansehen →NT5AD512M16A4-HR
✅ Drop-In✓ Auf Lager
$8.1 / Stück
Datenblatt ansehen →NT5AD512M16
✅ Drop-In✓ Auf Lager
$73.75 / Stück
Datenblatt ansehen →MT40A512M16JY-075E
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$30.5 / Stück
Datenblatt ansehen →K4A8G165WB-BCWE
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$6.55 / Stück
Datenblatt ansehen →H5AN8G6NDJR
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$35 / Stück
Datenblatt ansehen →NT5AD512M16A4-GZ Grenzwerte & elektrische Eigenschaften
| Speichertyp | DDR4 SDRAM |
| Speicherorganisation | 512M x 16 |
| Density | 8Gb |
| Versorgungsspannung | 1.2V |
| Maximale Taktfrequenz | 1200 MHz |
| Datenbusbreite | 16 bits |
| Gehäuse | TFBGA-96 |
| Number of Terminals | 96 |
| Interleaved Burst Length | 4, 8 |
| Access Mode | Four Bank Page Burst |
| Betriebstemperaturbereich | Commercial and Industrial |
| RoHS | Compliant |
| Lead-Free | Yes |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| CRC Function | Yes |
| Data Mask Function | Yes |
| Write Leveling Function | Yes |
| ZQ Calibration Function | Yes |
NT5AD512M16A4-GZ Pin-Konfiguration
| Pin A1 | VDD — Power supply |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ2 — Data input/output 2 |
| Pin B3 | DQ3 — Data input/output 3 |
| Pin C1 | VDDQ — Power supply for output buffers |
| Pin C2 | DQ4 — Data input/output 4 |
| Pin C3 | DQ5 — Data input/output 5 |
| Pin D1 | VSSQ — Ground for output buffers |
| Pin D2 | DQ6 — Data input/output 6 |
| Pin D3 | DQ7 — Data input/output 7 |
| Pin E1 | VDD — Power supply |
| Pin E2 | DQS0 — Data strobe 0 |
| Pin E3 | DQS0# — Data strobe 0 complement |
| Pin F1 | VSS — Ground |
| Pin F2 | DM0 — Data mask 0 |
| Pin F3 | VDDQ — Power supply for output buffers |
| Pin G1 | VSSQ — Ground for output buffers |
| Pin G2 | CK — Clock input |
| Pin G3 | CK# — Clock input complement |
| Pin H1 | VDD — Power supply |
| Pin H2 | CKE — Clock enable |
| Pin H3 | CS# — Chip select |
| Pin J1 | VSS — Ground |
| Pin J2 | RAS# — Row address strobe |
| Pin J3 | CAS# — Column address strobe |
| Pin K1 | VDDQ — Power supply for output buffers |
| Pin K2 | WE# — Write enable |
| Pin K3 | A0 — Address input 0 |
| Pin L1 | VSSQ — Ground for output buffers |
| Pin L2 | A1 — Address input 1 |
| Pin L3 | A2 — Address input 2 |
| Pin M1 | VDD — Power supply |
| Pin M2 | A3 — Address input 3 |
| Pin M3 | A4 — Address input 4 |
| Pin N1 | VSS — Ground |
| Pin N2 | A5 — Address input 5 |
| Pin N3 | A6 — Address input 6 |
| Pin P1 | VDDQ — Power supply for output buffers |
| Pin P2 | A7 — Address input 7 |
| Pin P3 | A8 — Address input 8 |
| Pin R1 | VSSQ — Ground for output buffers |
| Pin R2 | A9 — Address input 9 |
| Pin R3 | A10/AP — Address input 10 / Auto precharge |
| Pin T1 | VDD — Power supply |
| Pin T2 | A11 — Address input 11 |
| Pin T3 | A12/BC# — Address input 12 / Burst chop |
| Pin U1 | VSS — Ground |
| Pin U2 | A13 — Address input 13 |
| Pin U3 | A14 — Address input 14 |
| Pin V1 | VDDQ — Power supply for output buffers |
| Pin V2 | A15 — Address input 15 |
| Pin V3 | BA0 — Bank address 0 |
| Pin W1 | VSSQ — Ground for output buffers |
| Pin W2 | BA1 — Bank address 1 |
| Pin W3 | BA2 — Bank address 2 |
| Pin Y1 | VDD — Power supply |
| Pin Y2 | BG0 — Bank group 0 |
| Pin Y3 | BG1 — Bank group 1 |
| Pin AA1 | VSS — Ground |
| Pin AA2 | ACT# — Activate command |
| Pin AA3 | PAR — Parity input |
| Pin AB1 | VDDQ — Power supply for output buffers |
| Pin AB2 | ALERT# — Alert output |
| Pin AB3 | RESET# — Reset input |
| Pin AC1 | VSSQ — Ground for output buffers |
| Pin AC2 | TEN — Temperature sensor enable |
| Pin AC3 | ZQ — Calibration reference |
| Pin AD1 | VDD — Power supply |
| Pin AD2 | VREFCA — Reference voltage for command/address |
| Pin AD3 | VTT — Termination voltage |
Typische Anwendungen
NT5AD512M16A4-GZ ist geeignet für 6 Anwendungs: Enterprise Servers, Data Center & Enterprise Computing, Networking Equipment, Industrial Automation, Automotive ADAS, Consumer Electronics.
Enterprise Servers
The NT5AD512M16A4-GZ provides high-density, high-bandwidth memory for enterprise servers, supporting virtualization, database management, and cloud computing. Its 8Gb density and DDR4-2400 speed enable fast data access and large memory pools, improving overall system performance. The 1.2V operation reduces power consumption, lowering total cost of ownership in data centers.
Empfohlen
Data Center & Enterprise Computing
In data centers, the NT5AD512M16A4-GZ supports high-performance computing, AI inference, and big data analytics. Its high bandwidth and low latency are critical for processing large datasets. The device's industrial temperature range ensures reliable operation in demanding environments. The built-in temperature sensor and auto self-refresh enhance data integrity and power efficiency.
Empfohlen
Networking Equipment
The NT5AD512M16A4-GZ is ideal for networking equipment such as routers, switches, and firewalls, where high-speed packet processing and large routing tables require substantial memory. Its 8Gb density and DDR4-2400 speed provide the necessary bandwidth for line-rate forwarding. The compact TFBGA package saves PCB space, and the low 1.2V supply reduces heat generation in dense chassis.
Empfohlen
Industrial Automation
In industrial automation, the NT5AD512M16A4-GZ provides reliable memory for PLCs, robotics, and machine vision systems. Its industrial temperature range ensures operation in harsh environments. The device's CRC and data mask functions improve data integrity in noisy industrial settings. The 1.2V operation reduces power consumption, which is beneficial for energy-efficient factory floors.
Empfohlen
Automotive ADAS
The NT5AD512M16A4-GZ is used in automotive advanced driver assistance systems (ADAS) for real-time sensor fusion and decision making. Its high bandwidth supports processing of camera, radar, and LiDAR data. The device's industrial temperature range is suitable for automotive environments. The built-in temperature sensor and auto self-refresh enhance reliability in varying thermal conditions.
Empfohlen
Consumer Electronics
The NT5AD512M16A4-GZ can be used in high-end consumer electronics such as gaming consoles, set-top boxes, and smart TVs, where high memory bandwidth is needed for graphics and multimedia. Its 8Gb density allows for smooth multitasking and fast app loading. The low 1.2V supply helps extend battery life in portable devices, and the compact TFBGA package fits slim designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für NT5AD512M16A4-GZ – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | NT5AD512M16C4-JRI | MT40A512M16JY-075E | K4A8G165WB-BCWE |
|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | Micron Technology | Samsung Electronics |
| Density | 8Gb | 8Gb | 8Gb | 8Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Wichtigste Unterscheidungsmerkmale
- Industrial temperature range support (vs. MT40A512M16JY-075E)
- Same-brand availability (vs. K4A8G165WB-BCWE)
- Built-in temperature sensor (vs. H5AN8G6NDJR)
Designhinweise
For DDR4 routing, maintain matched trace lengths for DQ, DQS, and address/command signals to ensure signal integrity. Use controlled impedance traces (typically 40-50 ohms single-ended, 80-100 ohms differential) and provide proper termination for VTT. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to minimize power supply noise.
The NT5AD512M16A4-GZ operates over commercial and industrial temperature ranges. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The TFBGA package has a low thermal resistance, but power dissipation should be considered. Monitor the built-in temperature sensor to implement thermal throttling if necessary.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for proper impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Also, ensure VREFCA and VTT are properly decoupled to avoid reference voltage noise, which can cause data errors.
Compliance-Informationen
RoHS compliant and lead-free as per distributor listings. AEC-Q100 not applicable as this is a memory IC, not an automotive-qualified part.
