NT5AD512M16C4-JR - 8Gb DDR4-3200 SDRAM | Nanya Tech
Référence : NT5AD512M16C4-JR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $94.74 | $94,74 |
| 10 | $89.5 | $895,00 |
| 100 | $84.25 | $8 425,00 |
| 500 | $79 | $39 500,00 |
| 1 000 | $73.75 | $73 750,00 |
NT5AD512M16C4-JR Présentation
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to its predecessor DDR3. It is a key component in modern computing systems, providing the main memory for processors, and is also used in networking equipment, industrial controllers, and embedded systems. DDR4 operates at a lower voltage (1.2V) than DDR3 (1.5V), reducing power consumption and heat generation, which is critical for high-density memory modules and portable devices.
Key features of the NT5AD512M16C4-JR include auto self-refresh, a built-in temperature sensor, auto precharge, asynchronous reset, data mask, write leveling, dynamic on-chip termination (DTC), ZQ calibration, and CRC (Cyclic Redundancy Check) function. These features enhance signal integrity, reliability, and ease of integration in high-speed systems. The operating temperature range is 0°C to +95°C, making it suitable for commercial and industrial environments.
Technically, the device supports a burst length of 8 and on-die termination (ODT) for improved signal quality. The ZQ calibration function allows the device to adjust its output driver and ODT impedances to match the system's characteristic impedance, reducing reflections and improving data eye margins. The CRC function provides error detection for data transmitted during write operations, enhancing data integrity in critical applications.
Typical applications include consumer electronics (e.g., set-top boxes, smart TVs), industrial automation, networking systems (routers, switches), and smart IoT devices. The high density and speed make it ideal for applications requiring large memory capacity and fast data throughput, such as edge computing and real-time data processing.
When designing with this component, ensure proper decoupling capacitors are placed near the power pins to minimize noise, and follow the PCB layout guidelines in the datasheet for high-speed signals to maintain signal integrity. The device requires a 1.2V VDD and a separate VPP supply (2.5V) for the wordline driver, which must be properly regulated.
Alternatives de remplacement direct pour NT5AD512M16C4-JR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec NT5AD512M16C4-JR (même facteur de forme et même empreinte) — différant par Package, Data Rate, Density, Operating Temperature, Memory Type.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
NT5AD512M16C4-HR
✓ En stock
$43.1 / unité
Voir la fiche technique →MT40A512M16TB-062E:R
✓ En stock
$60 / unité
Voir la fiche technique →K4A8G165WB-BCTD
✓ En stock
$37 / unité
Voir la fiche technique →H5AN8G6NCJR-xxC
✓ En stock
$6.5 / unité
Voir la fiche technique →K4A8G165WB-BCRC
✓ En stock
$12.57 / unité
Voir la fiche technique →NT5AD512M16C4-JR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Organisation de la mémoire | 512M x16 |
| Density | 8 Gbit |
| Supply Voltage (VDD) | 1.2 V |
| Débit de données | 1.6 GHz (DDR4-3200) |
| Boîtier | TFBGA-96 |
| Plage de température de fonctionnement | 0°C to +95°C |
| Standby Current | 0.023 A (max) |
| Number of Terminals | 96 |
| Auto Self-Refresh | Yes |
| Built-in Temperature Sensor | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| Write Leveling | Yes |
| Dynamic On-Chip Termination | Yes |
| ZQ Calibration | Yes |
| CRC Function | Yes |
| RoHS | Compliant |
Configuration des broches de NT5AD512M16C4-JR
| Broche A1 | VDD — Power supply (1.2V) |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data input/output 2 |
| Broche B3 | DQ3 — Data input/output 3 |
| Broche C1 | VDDQ — I/O power supply |
| Broche C2 | DQ4 — Data input/output 4 |
| Broche C3 | DQ5 — Data input/output 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data input/output 6 |
| Broche D3 | DQ7 — Data input/output 7 |
| Broche E1 | VPP — Wordline driver power (2.5V) |
| Broche E2 | DQS_t — Data strobe (true) |
| Broche E3 | DQS_c — Data strobe (complement) |
| Broche F1 | VDD — Power supply |
| Broche F2 | DM — Data mask |
| Broche F3 | VSS — Ground |
Applications typiques
NT5AD512M16C4-JR convient pour 6 applications: Networking Equipment, Industrial Automation, Smart IoT Devices, Consumer Electronics, Edge Computing, Automotive Infotainment.
Networking Equipment
The NT5AD512M16C4-JR provides high-density, high-speed memory for routers, switches, and firewalls. Its 8Gb capacity and DDR4-3200 data rate support large routing tables and fast packet processing. The low 1.2V operation reduces power in always-on network devices. With features like CRC and write leveling, it ensures reliable data transfer in high-speed backplanes. The TFBGA-96 package fits compact line card designs. For a 16-port switch, this memory can buffer and forward packets at line rate, improving throughput and reducing latency.
Recommandé
Industrial Automation
In industrial controllers and PLCs, the NT5AD512M16C4-JR offers reliable memory for real-time control algorithms and data logging. Its 0°C to +95°C temperature range suits factory environments. The built-in temperature sensor and auto self-refresh maintain data integrity during power fluctuations. The 8Gb density allows storing extensive process data. With a 1.2V supply, it integrates well with low-power industrial SoCs. For a robotic arm controller, this memory can store trajectory data and sensor readings, enabling precise motion control.
Recommandé
Smart IoT Devices
For smart home hubs and edge gateways, the NT5AD512M16C4-JR provides ample memory for running local AI models and managing multiple sensor streams. Its low power consumption is critical for battery-backed devices. The compact TFBGA-96 package enables small form factors. Features like auto precharge and data mask optimize memory efficiency. The 8Gb capacity supports complex applications like video analytics. In a smart speaker, this memory can buffer audio streams and process voice commands locally, reducing cloud dependency.
Recommandé
Consumer Electronics
In set-top boxes and smart TVs, the NT5AD512M16C4-JR delivers high bandwidth for 4K video decoding and smooth UI rendering. Its DDR4-3200 speed ensures fast data access for multimedia applications. The 1.2V operation reduces heat in compact consumer enclosures. With 8Gb capacity, it can hold multiple app instances and video buffers. The CRC function enhances data integrity for streaming content. For a 4K TV, this memory supports high-resolution graphics and quick channel switching.
Recommandé
Edge Computing
The NT5AD512M16C4-JR is ideal for edge servers and AI accelerators that require large memory capacity and high bandwidth. Its 8Gb density supports running multiple virtual machines or containerized applications. The low latency of DDR4-3200 enables fast inference for machine learning models. The built-in temperature sensor helps manage thermal throttling in dense edge deployments. With features like write leveling and DTC, it maintains signal integrity in high-speed traces. For an edge gateway processing sensor data, this memory can handle real-time analytics and local decision-making.
Recommandé
Automotive Infotainment
In automotive infotainment systems, the NT5AD512M16C4-JR provides reliable memory for navigation, media playback, and driver assistance displays. Its 0°C to +95°C range covers cabin environments. The low power consumption is beneficial for vehicle battery life. The 8Gb capacity supports complex UI and map data. Features like auto self-refresh ensure data retention during ignition cycles. For a head unit, this memory can store navigation maps and run multiple apps simultaneously, enhancing the user experience.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour NT5AD512M16C4-JR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | NT5AD512M16C4-HR | MT40A512M16TB-062E | K4A8G165WB-BCTD | H5AN8G6NCJR-xxC |
|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 | R: TFBGA-96 | TFBGA-96 | TFBGA-96 |
| Brand | Nanya Technology | Nanya Technology | R: Micron Technology | Samsung Electronics | SK Hynix |
| Density | 8 Gbit | 8 Gbit | R: 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x16 | 512M x16 | R: 512M x16 | 512M x16 | 512M x16 |
| Data Rate | DDR4-3200 | DDR4-3200 | R: DDR4-3200 | DDR4-3200 | DDR4-3200 |
| Supply Voltage | 1.2V | 1.2V | R: 1.2V | 1.2V | 1.2V |
Principaux différenciateurs
- Cost-effective 8Gb DDR4-3200 solution (vs MT40A512M16TB-062E:R)
- Built-in temperature sensor (vs K4A8G165WB-BCTD)
- CRC function for data integrity (vs H5AN8G6NCJR-xxC)
Notes de conception
For high-speed DDR4 signals, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 25-40 ohms for address/command lines. Keep trace lengths matched within +/- 10 mils for data groups. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the memory power input. Follow the layout guidelines in the Nanya datasheet for optimal signal integrity.
The NT5AD512M16C4-JR has a maximum operating temperature of +95°C. Ensure adequate airflow or heatsinking in high-ambient environments. The TFBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For industrial applications, monitor the built-in temperature sensor to prevent overheating and implement thermal throttling if necessary.
The device requires a 1.2V VDD and a 2.5V VPP supply. Use low-noise LDOs or DC-DC converters with proper filtering. The VPP supply must be stable and within the specified range to ensure reliable wordline operation. Add a 0.1uF capacitor close to each VPP pin. Also, ensure the VDDQ supply (1.2V) is clean to maintain signal integrity on the data bus.
Informations de conformité
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
