MPX2010DP vs MPXC2012DT1 Comparación
Comparación detallada lado a lado de MPX2010DP por NXP Semiconductors y MPXC2012DT1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPX2010DP | MPXC2012DT1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,50 | $7,40 |
| Tipo de sensor | Differential Pressure Sensor | — |
| Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | — |
| Technology | Piezoresistive (silicon strain gauge bridge) | — |
| Tipo de salida | Analog voltage, Wheatstone bridge (mV level) | Wheatstone Bridge (analog mV) |
| Typical Full-Scale Span | 25 mV at 10 V excitation | — |
| Zero Pressure Offset | 0 mV nominally (±1.0 mV max) | — |
| Tensión de alimentación | 10 V DC typical (max 16 V) | — |
| Linearity | ±0.05% (typ) | [DATA_NEEDED: linearity %FS] |
| Temperature Compensation | 0 °C to +85 °C (on-chip) | — |
| Temperatura de funcionamiento | -40 °C to +125 °C | [DATA_NEEDED: operating temperature range] |
| Response Time | 1.0 ms (typical) | — |
| Maximum Overpressure | 75 kPa | — |
| Burst Pressure | 200 kPa | — |
| Port Configuration | Dual ports (differential), 0.19 inch / 4.93 mm tubes | — |
| Package / Mounting | 4-SIP Module (through-hole with axial tubes) | — |
| Media Compatibility | Dry air or non-corrosive gas | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Pressure Type | — | Differential |
| Operating Pressure | — | 1.45 PSI (10 kPa) |
| Maximum Over Pressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Full-Scale Output | — | 24 mV to 26 mV (typ. 25 mV) at 10 V excitation |
| Offset (Null) | — | 0 mV nominal at 10 V excitation |
| Excitation Voltage | — | 10 V DC typical |
| Bridge Resistance | — | [DATA_NEEDED: input/output bridge resistance] |
| Pressure Port Size | — | Female, 0.128 in (3.25 mm) side port |
| Port Style | — | Side port, single barbed inlet |
| Encapsulado / Carcasa | — | 4-SSIP Module (chip-pak, no gel) |
| Termination Style | — | Through-hole PCB (vertical mount) |
| Gel Protection | — | No (bare die in chip-pak cavity) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Tipo de montaje | — | Through-hole, vertical |
| Nivel MSL | — | Not applicable (through-hole sensor module) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola) |