IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon
N.º de pieza: IAUT300N10S5N015ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $6.5 | $6,50 |
| 10 | $5.85 | $58,50 |
| 100 | $5.2 | $520,00 |
| 500 | $4.65 | $2.325,00 |
| 1.000 | $4.1 | $4.100,00 |
IAUT300N10S5N015ATMA1 Descripción general
What is a power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch optimized for switching and conducting large currents at high efficiency. It belongs to the power-management transistor family, sitting below wide-bandgap devices (GaN, SiC) and above small-signal MOSFETs in the power-electronics taxonomy. The MOSFET's low R<sub>DS(on)</sub> directly determines conduction losses: P = I² × R<sub>DS(on)</sub>, so a 1.5 mΩ part dissipating 300 A loses approximately 135 W purely in conduction.
Key features include 1.5 mΩ typical R<sub>DS(on)</sub> at VGS=10 V, ±20 V gate-source rating, and 100% avalanche-tested reliability per Infineon's OptiMOS 5 process. The device is AEC-Q101 qualified for automotive environments, supports MSL1 reflow up to 260°C peak, and operates across 175°C junction temperature. The OptiMOS 5 generation uses Infineon's latest trench-cell technology to lower switching losses versus earlier OptiMOS generations.
The PG-HSOF-8-1 package provides a large exposed metal drain tab with very low thermal resistance (~0.4°C/W typical), enabling 375 W dissipation with proper PCB thermal via design. The footprint is optimized for high-current automotive PCB layouts where paralleling and copper-cooling area are critical. Compared with TO-220/TO-263 packages, PG-HSOF-8-1 achieves roughly half the R<sub>DS(on)</sub> per unit area thanks to its clip-bonded source-down construction.
Typical applications include 48 V mild-hybrid inverter switching, high-current DC-DC converter primary-side switches, BLDC motor drivers in electric power steering and brake-by-wire, battery disconnect switches, and automotive e-fuse protection circuits. Its low R<sub>DS(on)</sub> reduces I²R losses in 300 A-class switching where every milliohm translates into significant thermal budget recovery.
When designing with this device, calculate conduction loss P_cond = I_rms² × R<sub>DS(on)</sub> at your hottest operating temperature (R<sub>DS(on)</sub> typically doubles from 25°C to 175°C). Provide sufficient PCB copper area (at least 4 square inches of 2 oz copper with thermal vias) to keep junction rise below 50°C at full 300 A load. Gate-drive voltage should be 10 V for rated R<sub>DS(on)</sub>; lower VGS raises R<sub>DS(on)</sub> dramatically.
This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives, and practical thermal design notes not found in the manufacturer datasheet alone.
Alternativas directas para IAUT300N10S5N015ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IAUT300N10S5N015ATMA1 (mismo factor de forma y huella) — difiere en Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IAUT300N08S5N011ATMA1
✅ Sustitución directa✓ En stock
$5.4 / unidad
Ver hoja de datos →IAUC90N10S5N062ATMA1
✅ Sustitución directa✓ En stock
$0.95 / unidad
Ver hoja de datos →IAUC100N04S6L020ATMA1
✅ Sustitución directa✓ En stock
$0.86 / unidad
Ver hoja de datos →IAUZ40N08S5N100ATMA1
✅ Sustitución directa✓ En stock
$0.71 / unidad
Ver hoja de datos →ISC011N03L5SATMA1
✅ Sustitución directa✓ En stock
$0.47 / unidad
Ver hoja de datos →IAUT300N10S5N015ATMA1 Valores máximos y características eléctricas
| Technology | OptiMOS 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc) | 300 A |
| Power Dissipation (PD, Tc) | 375 W |
| RDS(on) (typ, VGS=10V) | 1.5 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Rango de temperatura de funcionamiento | -55°C to +175°C |
| Encapsulado | PG-HSOF-8-1 (HSOF-8) |
| Tipo de montaje | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| Nivel MSL | MSL1 (260°C peak reflow) |
| RoHS Compliance | RoHS compliant (Green product) |
| Avalanche Tested | 100% avalanche tested |
| Polarity | N-Channel |
| Mode of Operation | Enhancement-mode |
Configuración de pines de IAUT300N10S5N015ATMA1
| Pin 1 | Source — Source connection (parallel-bonded) |
| Pin 2 | Source — Source connection (parallel-bonded) |
| Pin 3 | Source — Source connection (parallel-bonded) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (parallel-bonded) |
| Pin 6 | Source — Source connection (parallel-bonded) |
| Pin 7 | Source — Source connection (parallel-bonded) |
| Pin 8 | Source / Drain Tab — Source bond pad / drain exposed metal tab (electrically drain-tied, exposed for thermal dissipation) |
Área de funcionamiento seguro (DC)
Aplicaciones típicas
IAUT300N10S5N015ATMA1 es adecuado para 6 aplicacións: 48V Mild-Hybrid Inverter Switching, High-Current DC-DC Converter Primary Switch, BLDC Motor Driver for Electric Power Steering, Battery Disconnect Switch / eFuse Protection, Industrial 48V Robotics Drive, Solar Inverter / Energy Storage DC Switch.
48V Mild-Hybrid Inverter Switching
The IAUT300N10S5N015ATMA1's 100 V VDS rating with 1.5 mΩ RDS(on) makes it ideal as the primary switching element in 48V mild-hybrid inverters. The 300 A continuous current handles the 10–20 kW peak power levels of integrated starter-generators (ISG) and e-turbos, while the AEC-Q101 qualification satisfies automotive reliability targets. The HSOF-8 package's low thermal resistance (~0.4°C/W) keeps junction temperature in check during 100% duty-cycle torque-assist events, and the 100% avalanche rating provides robustness during inductive load dumps.
Recomendado
High-Current DC-DC Converter Primary Switch
In 48V-to-12V or 48V-to-5V DC-DC converters delivering 3–5 kW, the IAUT300N10S5N015ATMA1 serves as the primary-side synchronous-rectifier or main switch. Its 1.5 mΩ RDS(on) reduces conduction loss to ~135 W at full 300 A load, dramatically improving efficiency versus discrete MOSFET arrays. The 100 V VDS provides comfortable margin above 48V bus transients (ISO 7637-2 pulses up to ~85V), and the AEC-Q101 grade supports under-hood deployment near engine control units.
Recomendado
BLDC Motor Driver for Electric Power Steering
The 300 A continuous current capability of IAUT300N10S5N015ATMA1 supports column-assist EPS systems delivering peak torque during parking maneuvers. Its ultra-low RDS(on) minimizes I²R dissipation in the H-bridge, reducing heatsink mass critical for steering-column-mounted PCBs. The HSOF-8 package handles the repetitive peak-current pulses of servo loops, and AEC-Q101 plus 175°C operation satisfy ISO 26262 ASIL-D functional-safety designs with redundant driver channels.
Recomendado
Battery Disconnect Switch / eFuse Protection
As a battery disconnect switch in 48V lithium-ion packs, the IAUT300N10S5N015ATMA1 carries continuous 300 A while its 1.5 mΩ RDS(on) keeps voltage drop below 0.5V at peak load. During short-circuit events, the device's 100% avalanche rating handles the inductive kickback from the battery bus inductance without catastrophic failure. The HSOF-8 footprint simplifies paralleling two devices for 600 A systems, and AEC-Q101 qualification is mandatory for ISO 26262 battery-management deployments.
Recomendado
Industrial 48V Robotics Drive
In AGV/AMR robotic drive systems operating on 48V industrial bus rails, the IAUT300N10S5N015ATMA1 provides the high-current switching required for servo and traction inverters. Its 100 V VDS offers 2x safety margin over 48V nominal (typically 56V peak), preventing avalanche failure during regenerative-braking events. The 175°C junction rating supports enclosed motor housings with limited airflow, while the HSOF-8 package's clip-bond construction tolerates high-vibration robot-cell environments.
Recomendado
Solar Inverter / Energy Storage DC Switch
In solar microinverters and residential energy-storage systems, the IAUT300N10S5N015ATMA1 functions as the high-side disconnect switch for 48V battery banks. The 1.5 mΩ RDS(on) minimizes idle losses in always-on energy-storage systems, extending battery life. Its 100V VDS handles the maximum power-point voltage of 48V strings with margin, and the HSOF-8 surface-mount package enables automated high-volume PCB assembly versus traditional TO-247 through-hole discretes.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IAUT300N10S5N015ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IAUT300N08S5N011ATMA1 | IAUC90N10S5N062ATMA1 | IAUC100N04S6L020ATMA1 | IAUZ40N08S5N100ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-1 (HSOF-8) | PG-HSOF-8-1 (HSOF-8) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same | PG-HSOF-8-1 (HSOF-8 family) - same |
| Drain-Source Voltage (VDS) | 100 V | 80 V | 100 V | 40 V | 80 V | 30 V |
| Process Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 |
Diferenciadores clave
- Highest continuous current in HSOF-8 class (frente a IAUC90N10S5N062ATMA1)
- Lower RDS(on) than IAUC100N04S6L020ATMA1 with same VDS class (frente a IAUC100N04S6L020ATMA1)
- Higher VDS rating than 80V-class Infineon alternatives (frente a IAUT300N08S5N011ATMA1)
- OptiMOS 5 generation with proven 100% avalanche rating (frente a IAUZ40N08S5N100ATMA1)
Notas de diseño
At 300 A continuous drain current and 1.5 mΩ RDS(on) (25°C), conduction loss is approximately 135 W. Estimated: assuming 4 sq. inches of 2 oz copper on the drain tab with 0.4°C/W junction-to-case and 50°C/W case-to-ambient, junction temperature rises ~110°C above ambient — adequate for 25°C ambient operation but borderline for 85°C under-hood. Add a forced-air fan or increase copper area to 6+ sq. inches for hot environments.
The PG-HSOF-8-1 drain tab is the primary thermal path; use a top-side copper pour of at least 4 sq. inches of 2 oz copper connected to the drain pad. Place an array of thermal vias (12–25 vias, 0.3 mm drill, 0.5 mm pitch) directly under the exposed pad to inner-layer copper spreading. Keep source-return current paths short and symmetric on all 7 source pins to balance current sharing and minimize parasitic source inductance that causes ringing.
Gate-drive traces should be kept short (<25 mm) and routed over a continuous ground plane to minimize gate-loop inductance. Place the gate driver (e.g., 1ED3323MC12NXUMA1) as close as possible to pins 4 (gate) and the source-return pins. Use a bootstrap or isolated gate-drive supply referenced to the source pad, not the drain tab, to avoid dv/dt-induced false triggering. Add a 10–100 Ω gate-resistor in series with the gate to dampen ringing at high di/dt.
Do not exceed VGS = ±20 V — the IAUT300N10S5N015ATMA1 has a relatively low absolute-maximum gate rating compared to 30 V-rated competitors. Always use a gate-source Zener clamp (typically 15–18 V) to protect against dv/dt-induced over-voltage during turn-off transients. Also avoid operating below VGS(th) (typically 2.5–3.5 V) — partial-turn-on causes the device to dissipate excessive power in the linear region.
Switching transients in this 300 A-class device can reach 5–10 kV/μs. Use a snubber (RC or RCD) across the drain-source if switching inductive loads without a freewheeling path. Measure gate-source voltage with a low-inductance probe tip (spring tip, <2 cm ground lead) to avoid spurious ringing that can confuse the driver logic. For paralleled operation, add individual gate-source resistors (10–100 Ω) per device to suppress parasitic oscillations between paralleled MOSFETs.
Información de cumplimiento
RoHS compliant (Green product) and AEC-Q101 qualified for automotive applications. MSL1 reflow rated to 260°C peak. Halogen-free status not explicitly stated in datasheet — set to 'unknown'.
