K4RBH046VM-BCCP - 32Gb DDR5 6400Mbps DRAM | Samsung
N.º de pieza: K4RBH046VM-BCCP ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.8 | $118,00 |
| 100 | $10.95 | $1.095,00 |
| 500 | $10.2 | $5.100,00 |
| 1.000 | $9.6 | $9.600,00 |
K4RBH046VM-BCCP Descripción general
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC-defined high-bandwidth volatile memory. Within the memory hierarchy it sits as DRAM -> synchronous DRAM (SDRAM) -> DDR SDRAM -> DDR5, serving as the main working memory between processors and storage in servers, workstations, and high-performance computing platforms.
Key features of this device include the high 32 Gb per-die density enabled by advanced DRAM process technology, the 2G x 4 organization favored by ECC-protected server channels, and the DDR5-6400 speed grade delivering substantially more than double the per-pin bandwidth of comparable DDR4 devices. DDR5 also introduces on-die ECC, a 12-bit pre-fetch architecture, and lower operating voltage (1.1 V) that together improve reliability and power efficiency.
The 2G x 4 organization means a x4-wide interface, typically deployed eight or sixteen deep in registered DIMMs with in-line ECC for servers and data center platforms. The BCCP speed bin corresponds to 6400 Mbps per pin over the commercial operating temperature range of 0 C to +85 C.
Typical applications include DDR5 RDIMM/LRDIMM modules for data center servers, high-performance computing memory subsystems, networking equipment, and industrial systems requiring long-term availability of DDR5 components.
When designing with this device, follow Samsung's power-distribution and fly-by-termination guidelines for DDR5: the 1.1 V core supply and separate DQ VDDQ rails require tight decoupling, and address/command bus termination must match the module topology.
This page synthesizes distributor stock data, parametric comparisons, and drop-in alternative analysis not found in the manufacturer datasheet.
Alternativas directas para K4RBH046VM-BCCP — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4RBH046VM-BCCP (mismo factor de forma y huella) — difiere en Operating Temperature, Data Rate, Package, Product Status, Interface.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4RCH046VM-2CLP
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$10.1 / unidad
Ver hoja de datos →K4RCH046VM-2CCM
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
Consulte el precio
Ver hoja de datos →K4RBH046VM-BCLP
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4RBH046VM-BCCP Valores máximos y características eléctricas
| Tipo de memoria | DDR5 SDRAM |
| Tamaño de memoria | 32 Gb |
| Memory Organization | 2G x 4 |
| Velocidad de datos | 6400 Mbps |
| Tensión de alimentación | 1.1 V |
| Interfaz | Parallel |
| Encapsulado | 78-FBGA |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | 0 C to +85 C |
| Memory Format | DRAM |
| Technology | DDR5 |
| Packaging | Tray |
| Product Status | Sample / Active |
Guía de configuración de pines de K4RBH046VM-BCCP 78-fbga
Configuración de pines para K4RBH046VM-BCCP (encapsulado 78-fbga). Este CI digital incluye GPIO, interfaces de comunicación (UART, SPI, I2C) y pines de alimentación. Consulte la hoja de datos del fabricante para conocer las funciones alternativas de los pines y las opciones de configuración. Esencial para el diseño de sistemas embebidos y el diseño de PCB.
No hay datos detallados de patillaje disponibles para K4RBH046VM-BCCP.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
K4RBH046VM-BCCP es adecuado para 6 aplicacións: Data Center Server RDIMM Memory, High-Performance Computing (HPC) Memory Subsystems, Networking and Telecommunications Equipment, Industrial Controllers and Edge Computing, DDR5 Memory Module Manufacturing, Replacement Sourcing and BOM Continuity.
Data Center Server RDIMM Memory
The K4RBH046VM-BCCP's 32 Gb density and 2G x 4 organization make it a primary component for registered DIMMs in data center servers, where x4 organization allows memory controllers to use in-line ECC across multiple DRAM devices for single-device data correction. At 6400 Mbps per pin, a channel populated with these devices delivers substantially higher bandwidth than DDR4-3200 equivalents, directly improving virtualization density and in-memory database throughput. The 1.1 V core supply reduces per-transfer energy versus DDR4's 1.2 V, lowering total server memory power draw at scale. Placed on a fly-by-routed RDIMM, the DRAM's DDR5 on-die ECC and CA bus parity features add reliability without host-side overhead, making it well suited to 24/7 cloud workloads.
Recomendado
High-Performance Computing (HPC) Memory Subsystems
HPC clusters depend on memory bandwidth to feed GPU and CPU accelerators, and the K4RBH046VM-BCCP's DDR5-6400 speed grade provides the per-pin throughput required for bandwidth-sensitive codes such as CFD and molecular dynamics. The 32 Gb die allows deeper-capacity modules (256 GB+ RDIMMs) without increasing device count, improving module yield and lowering cost per gigabyte. In these systems the DRAM operates at 1.1 V with 0 C to +85 C ambient, compatible with liquid- and air-cooled compute node environments. Samsung's long-term availability commitments for this DDR5 generation, noted by distributor SMC, reduce obsolescence risk across multi-year cluster deployment and service lifecycles.
Recomendado
Networking and Telecommunications Equipment
Routers, switches, and 5G baseband units buffer packet streams in DRAM, and the K4RBH046VM-BCCP offers the density (32 Gb) and deterministic DDR5 latency structure needed for deep packet buffers under load. The x4 organization suits fault-tolerant memory pools with ECC, an operational requirement for carrier-grade equipment targeting high uptime. At 6400 Mbps, line-card processors can sustain 100 GbE and higher forwarding rates without memory bottlenecks. The commercial 0 C to +85 C temperature range fits well-ventilated telecom racks. DDR5's on-die ECC and command/address parity improve data integrity for forwarding tables and flow state, reducing soft-error-driven resets in always-on network infrastructure deployments.
Recomendado
Industrial Controllers and Edge Computing
Industrial controllers, machine-vision systems, and edge AI gateways increasingly adopt DDR5 for its bandwidth-per-watt advantage. The K4RBH046VM-BCCP's 1.1 V operation lowers thermal load in sealed industrial enclosures where active cooling is limited, while the 32 Gb density supports frame buffering and local model inference on edge nodes. Distributor descriptions highlight deployment in industrial systems requiring long-term availability, a key concern for factory equipment with 10+ year service lives. Designers should derate the 0 C to +85 C operating window against enclosure ambient, adding heatspreading via the FBGA's thermal balls to the PCB ground plane to keep junction temperature within specification under continuous buffering workloads.
Recomendado
DDR5 Memory Module Manufacturing
Module houses building UDIMMs, RDIMMs, and LRDIMMs use the K4RBH046VM-BCCP as a core commodity die: its 2G x 4 organization allows 8-deep or 16-deep populations for 64 GB to 128 GB class modules with full ECC coverage. The 6400 Mbps bin supports mainstream DDR5-5600/6400 module SKUs for workstation and entry-server markets. Tray packaging suits automated pick-and-place at surface-mount lines, and the 78-ball FBGA footprint is compatible with standard DDR5 module assembly and rework processes. Sampling product status means module makers should secure allocation agreements with Samsung or authorized distributors before committing module roadmaps to this specific speed bin.
Recomendado
Replacement Sourcing and BOM Continuity
For buyers managing discontinued or allocated DDR5 bill-of-material lines, the K4RBH046VM-BCCP serves as an active Samsung DDR5 sourcing point with documented distributor stock (33,460 pcs at Octopart Canada as of Aug 31, 2026). Its defined speed bin (BCCP, 6400 Mbps) and fixed organization (2G x 4) simplify equivalence screening against legacy DDR5 line items. Buyers should verify the exact suffix against their approved vendor list, request date codes and COC (certificate of conformance) to avoid remarked parts, and validate that firmware memory-training tables support the BCCP speed bin. Long-term availability commitments from Samsung for this DDR5 generation reduce the frequency of requalification cycles.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4RBH046VM-BCCP — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4RCH046VM-2CLP | K4RCH046VM-2CCM | K4RBH046VM-BCLP | K4RAH086VB-BCQK |
|---|---|---|---|---|---|
| Package | 78-FBGA | 78-FBGA family - verify ball-map against datasheet | 78-FBGA family - verify ball-map against datasheet | 78-FBGA family - same datasheet family | 78-FBGA family - different organization (x8) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 32 Gb | 32 Gb | 32 Gb | 32 Gb | 16 Gb |
| Organization | 2G x 4 | 2G x 4 | 2G x 4 | 2G x 4 | 2G x 8 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
Diferenciadores clave
- Highest per-die density in comparison set (frente a K4RAH086VB-BCQK)
- x4 organization for in-line ECC server channels (frente a K4RAH086VB-BCQK)
- Same-die speed-bin flexibility within K4RBH family (frente a K4RBH046VM-BCLP)
Notas de diseño
The K4RBH046VM-BCCP runs from a 1.1 V core supply (DDR5 JEDEC standard). DDR5 devices also require separate VDDQ (DQ bus) rails and, on modules, a 12 V PMIC-based power architecture per the DDR5 specification. Design a low-impedance power distribution network with bulk capacitance near each DRAM and high-frequency ceramic decoupling at every power ball; power integrity at 6400 Mbps is the primary limit on achievable speed margin. Verify rail sequencing per the Samsung datasheet before power-rail bring-up.
At 6400 Mbps per pin, DDR5 signal integrity requires careful fly-by routing of the CA bus, length-matched DQ/DQS groups, and on-die termination (ODT) settings tuned per Samsung's guidelines. Reference planes must be continuous under all high-speed traces; avoid stubs on DQ nets. Memory-controller training algorithms (write leveling, read training, DFE) should be run at the target speed grade and margin-tested across temperature (0 C to +85 C) and voltage corners before release.
This part is listed with product status sampling at Samsung in some distributor sources, so confirm volume availability and revision before mass production. Do not confuse speed-bin suffixes: BCCP (6400 Mbps) is not interchangeable with lower bins (BCLP) in systems locked to a specific training table. Validate that your memory controller's qualified-vendor and firmware support lists include this exact suffix, and obtain date codes and certificates of conformance to guard against remarked components in the open market.
Información de cumplimiento
Compliance data not present in verified web data. Samsung DDR5 components are generally RoHS-compliant; confirm via official Samsung Semiconductor product page or distributor compliance certificate.
